Reduction of Process-induced Damage and Improvement of Imprint Characteristics in SrBi2Ta2O9 Capacitors by Postmetallization Annealing
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概要
- 論文の詳細を見る
We investigated the effect of process damage induced after capacitor etching procedures in the process of ferroelectric random access memory (FeRAM) fabrication for SrBi2Ta2O9 capacitors. We found that this damage was suppressed by postmetallization annealing (400 °C, 30 min in O2) and that imprint characteristics were improved by the annealing, because active elements such as hydrogen and water induced during contact hole formation on tungsten plugs and first-metal formation are adsorbed effectively by the annealing before they penetrate into these capacitors.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-02-15
著者
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Koiwa Ichiro
Department of Applied Material and Life Science, Faculty of Engineering, Kanto Gakuin University
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Koiwa Ichiro
Department Of Applied Material And Life Science Faculty Of Engineering Kanto Gakuin University
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Koiwa Ichiro
Department Of Applied Chemistry Science And Engineering Waseda University
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Ashikaga Kinya
Semiconductor R&d Division Semiconductor Business Group Oki Electric Industry Co. Ltd.
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Kanehara Takao
Semiconductor R&d Division Semiconductor Business Group Oki Electric Industry Co. Ltd.
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Takaya Koji
Semiconductor R&D Division, Semiconductor Business Group, Oki Electric Industry Co., Ltd., 550-1 Hig
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Yoshimaru Masaki
Semiconductor R&D Division, Semiconductor Business Group, Oki Electric Industry Co., Ltd., 550-1 Hig
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Takaya Koji
Semiconductor R&d Division Semiconductor Business Group Oki Electric Industry Co. Ltd.
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Yoshimaru Masaki
Semiconductor R&d Division Semiconductor Business Group Oki Electric Industry Co. Ltd.
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