Kanehara Takao | Semiconductor R&d Division Semiconductor Business Group Oki Electric Industry Co. Ltd.
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概要
関連著者
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Kanehara Takao
Semiconductor R&d Division Semiconductor Business Group Oki Electric Industry Co. Ltd.
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Koiwa Ichiro
Department Of Applied Chemistry Science And Engineering Waseda University
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Koiwa Ichiro
Semiconductor R&D Division, Semiconductor Business Group, Oki Electric Industry Co., Ltd., 550-1 Higashiasakawa-cho, Hachioji, Tokyo 193-8550, Japan
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Ashikaga Kinya
Semiconductor R&d Division Semiconductor Business Group Oki Electric Industry Co. Ltd.
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Kato Hiroyo
Semiconductor Technology Laboratory Research And Development Group Oki Electric Industry Co. Ltd.
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Takaya Koji
Semiconductor R&d Division Semiconductor Business Group Oki Electric Industry Co. Ltd.
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Koiwa Ichiro
Semiconductor Technology Laboratories Oki Electric Industry Co. Ltd.
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Kato Haruo
Semiconductor Technology Laboratory Research And Development Group Oki Electric Industry Co. Ltd.
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Kanehara T
Semiconductor Technology Laboratory Research And Development Group Oki Electric Industry Co. Ltd.
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KATO Hiroyo
Semiconductor Technology Laboratory, Research and Development Group, Oki Electric Industry Co. Ltd.
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SAKAKIBARA Akira
School of Science and Engineering, Waseda University
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Asami Katsuhiko
Institute For Material Research Tohoku University
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Ono Sachiko
Advanced Research Center Of Science And Engineering Waseda University
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OSAKA Tetsuya
Advanced Research Institute for Science & Engineering
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Osaka T
Department Of Applied Chemistry School Of Science And Engineering Waseda University
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Osaka Tetsuya
Kagami Memorial Laboratory For Materials Science And Technology Waseda University:department Of Appl
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ASAMI Katsuhiko
Institute for Materials Research, Tohoku University
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ONO Sachiko
Advanced Research Center of Science and Engineering, Waseda University
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Asami Katsuhiko
Institute For Materials Research Tohoku University
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Koiwa Ichiro
Department of Applied Material and Life Science, Faculty of Engineering, Kanto Gakuin University
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Koiwa Ichiro
Department Of Applied Material And Life Science Faculty Of Engineering Kanto Gakuin University
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Ono S
Saitama Univ. Urawa‐shi Jpn
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Sano Kazuya
Yokohama Plant Japan Steel Works Ltd.
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Ono S
Institute Of Industrial Science University Of Tokyo
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Osaka T
Graduate School Of Science And Engineering Waseda University
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Osaka Tetsuya
Department Of Applied Chemistry Science And Engineering Waseda University
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OSAKA Tetsuya
Advanced Research Institute for Science and Engineering, Waseda University, School of Science and En
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Takaya Koji
Semiconductor R&D Division, Semiconductor Business Group, Oki Electric Industry Co., Ltd., 550-1 Hig
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Yoshimaru Masaki
Semiconductor R&D Division, Semiconductor Business Group, Oki Electric Industry Co., Ltd., 550-1 Hig
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Osaka Tetsuya
Department Of Applied Chemistry Faculty Of Science And Engineering Waseda University
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Sakakibara A
Department Of Mechanical Engineering Okayama University
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Osaka Tetsuya
Graduate School Of Advanced Science And Engineering Waseda University
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Yoshimaru Masaki
Semiconductor R&d Division Semiconductor Business Group Oki Electric Industry Co. Ltd.
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Takaya Koji
Semiconductor R&D Division, Semiconductor Business Group, Oki Electric Industry Co., Ltd., 550-1 Higashiasakawa-cho, Hachioji, Tokyo 193-8550, Japan
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Koiwa Ichiro
Department of Applied Material and Life Science, Faculty of Engineering, Kanto Gakuin University, 1-50-1 Mutsuurahigashi, Kanazawa-ku, Yokohama 236-8501, Japan
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Nagatomo Yoshiki
Semiconductor R&D Division, Semiconductor Business Group, Oki Electric Industry Co., Ltd., 550-1 Higashiasakawa-cho, Hachioji, Tokyo 193-8550, Japan
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Kanehara Takao
Semiconductor R&D Division, Semiconductor Business Group, Oki Electric Industry Co., Ltd., 550-1 Higashiasakawa-cho, Hachioji, Tokyo 193-8550, Japan
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Ashikaga Kinya
Semiconductor R&D Division, Semiconductor Business Group, Oki Electric Industry Co., Ltd., 550-1 Higashiasakawa-cho, Hachioji, Tokyo 193-8550, Japan
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Nagatomo Yoshiki
Semiconductor R&D Division, Semiconductor Business Group, Oki Electric Industry Co., Ltd., 550-1 Higashiasakawa-cho, Hachioji, Tokyo 193-8550, Japan
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Koiwa Ichiro
Semiconductor Technology Laboratory, Research and Development Group,
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Kato Hiroyo
Semiconductor Technology Laboratory, Research and Development Group,
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Kanehara Takao
Semiconductor Technology Laboratory, Research and Development Group,
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Osaka Tetsuya
Advanced Research Institute for Science and Engineering, Waseda University,
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Sakakibara Akira
School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan
著作論文
- Effects of H_2 Sintering and Pt Upper Electrode on Metallic Bi Content in Sr_Bi_Ta_2O_9 Thin Films for Ferroelectric Memories Prepared by Sol-Gel Method
- Low Voltage Operation of Ferroelectric Sr_Bi_Ta_2O_9 Thin Films Crystallized by Excimer Laser Annealing
- Reduction of Process-induced Damage and Improvement of Imprint Characteristics in SrBi2Ta2O9 Capacitors by Postmetallization Annealing
- Effects of Storage Conditions on Imprint Characteristics in SrBi2Ta2O9 Capacitors
- Dependences of Process-Induced Damage on Imprint Characteristics in SrBi2Ta2O9 Capacitors
- Effects of H2 Sintering and Pt Upper Electrode on Metallic Bi Content in Sr0.9Bi2.1Ta2O9 Thin Films for Ferroelectric Memories Prepared by Sol-Gel Method