Dependences of Process-Induced Damage on Imprint Characteristics in SrBi2Ta2O9 Capacitors

概要

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We investigated hysteresis shifts in SrBi2Ta2O9 capacitors during high-temperature storage in an attempt to understand the mechanism underlying imprint degradation. We found that the activation energy ($E_{\text{a}}$) of imprint degradation is derived from the temperature dependence of the hysteresis shift, but is almost independent of the size of the capacitors (about 0.2 eV). On the other hand, $E_{\text{a}}$ is strongly dependent on the size of contact areas on the upper electrodes of the capacitors (0.1 to 0.2 eV). This result suggests that imprint degradation is mainly due to the characteristics of ferroelectric-electrode interfaces, and is not due to the edges of the capacitors. We reached this conclusion because the dependence on the contact areas is related to process-induced damage near the upper electrode.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-09-15