Effects of Storage Conditions on Imprint Characteristics in SrBi2Ta2O9 Capacitors
スポンサーリンク
概要
- 論文の詳細を見る
The effects on the imprint characteristics of SrBi2Ta2O9 capacitors of various storage conditions were investigated. It was observed that the hysteresis shifts due to imprint degradations were smaller in the case in which the both electrodes of the capacitors were connected after increasing the temperature of the capacitors that were polarized at room temperature than in the case in which the electrodes were not connected. The acceleration ratio ($R_{\text{acc}}$) of the slope of the hysteresis shift in the capacitors without connected electrodes to that with connected electrodes is 1.35 at 125 °C in device-size capacitors, and the ratio is much less dependent on temperature than the hysteresis shift. Moreover, it was also found that $R_{\text{acc}}$ was smaller in the case in which the process-induced damage located near the interfaces was larger.
- 2006-09-30
著者
-
Koiwa Ichiro
Department Of Applied Chemistry Science And Engineering Waseda University
-
Ashikaga Kinya
Semiconductor R&d Division Semiconductor Business Group Oki Electric Industry Co. Ltd.
-
Kanehara Takao
Semiconductor R&d Division Semiconductor Business Group Oki Electric Industry Co. Ltd.
-
Takaya Koji
Semiconductor R&d Division Semiconductor Business Group Oki Electric Industry Co. Ltd.
-
Koiwa Ichiro
Department of Applied Material and Life Science, Faculty of Engineering, Kanto Gakuin University, 1-50-1 Mutsuurahigashi, Kanazawa-ku, Yokohama 236-8501, Japan
-
Nagatomo Yoshiki
Semiconductor R&D Division, Semiconductor Business Group, Oki Electric Industry Co., Ltd., 550-1 Higashiasakawa-cho, Hachioji, Tokyo 193-8550, Japan
-
Nagatomo Yoshiki
Semiconductor R&D Division, Semiconductor Business Group, Oki Electric Industry Co., Ltd., 550-1 Higashiasakawa-cho, Hachioji, Tokyo 193-8550, Japan
関連論文
- Effects of Ni-P substrate structure and Pd/Au film thicknesses on the wire bonding strength of electroless Au/Pd/Ni-P films (特集 TCEP2007英文論文集)
- Effect of Annealing Method to Crystalize on Sr_Bi_Ta_2O_ Thin Film Properties Formed from Alkoxide Solution
- Orientation Control of Sr_Bi_Ta_2O_ Thin Films by Chemical Liquid Deposition
- Crystallization of Sr_Bi_Ta_O_ Thin Films by Chemical Liquid Deposition
- Orientation Control of Sr_Bi_Ta_2O_9 Thin Films by Chemical Process
- Effect of Phosphorus Content of the Magnetic and Electric Properties of Electroless Ni-P Film after Heat Treatment : Magnetism, Magnetic Materials and Devices
- Control of Crystal Orientation of Ferroelectric SrBi_2Ta_2O_9 Thin Films with Multi-Seeding Layers
- Effects of H_2 Sintering and Pt Upper Electrode on Metallic Bi Content in Sr_Bi_Ta_2O_9 Thin Films for Ferroelectric Memories Prepared by Sol-Gel Method
- Crystallization Process of Sr_Bi_Ta_2O_9 Thin Films with Different Crystal Orientation Prepared by Chemical Liquid Deposition Using Alkoxide Precursor(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Structural Defects in Sr_Bi_Ta_2O_9 Thin Film for Ferroelectric Memory(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Phase Transition in Ferroelectric SrBi_2Ta_2O_9) Thin Films with Change of Heat-treatment Temperature
- Correlation between Magnetic Properties and Composition of Electroless-Plated Cobalt Alloy Films for Perpendicular Magnetic Recording Media
- Role of Excess Bi in SrBi_2Ta_2O_9 Thin Film Prepared Using Chemical Liquid Deposition and Sol-Gel Method
- Low Voltage Operation of Ferroelectric Sr_Bi_Ta_2O_9 Thin Films Crystallized by Excimer Laser Annealing
- Submicron Ferroelectric Capacitors Fabricated by Chemical Mechanical Polishing Process for High-Density Ferroelectric Memories
- Submicron Ferroelectric Capacitors Fabricated by CMP Process for High-Density FeRAMs
- Reduction of Process-induced Damage and Improvement of Imprint Characteristics in SrBi2Ta2O9 Capacitors by Postmetallization Annealing
- Preparation of Ferroelectric Sr_Bi_Ta_2O_9 Thin Films by Misted Deposition Method Using Alkoxide Solution(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- A Study on MgO Powder and MgO Liquid Binder in the Screen-Printed Protective Layer for AC-PDPs
- Effects of Storage Conditions on Imprint Characteristics in SrBi2Ta2O9 Capacitors
- Dependences of Process-Induced Damage on Imprint Characteristics in SrBi2Ta2O9 Capacitors
- Complete magnetic anisotropy films for perpendicular recording prepared by an electroless plating method.
- Effects of H2 Sintering and Pt Upper Electrode on Metallic Bi Content in Sr0.9Bi2.1Ta2O9 Thin Films for Ferroelectric Memories Prepared by Sol-Gel Method
- Thermal stability of electroless nickel-molybdenum-phosphorus alloy films.
- Effect of molybdenum codeposition on the thermal properties of electroless Ni-B alloy plating films.