Koiwa Ichiro | Semiconductor Technology Laboratories Oki Electric Industry Co. Ltd.
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概要
- KOIWA Ichiroの詳細を見る
- 同名の論文著者
- Semiconductor Technology Laboratories Oki Electric Industry Co. Ltd.の論文著者
関連著者
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Koiwa Ichiro
Semiconductor Technology Laboratories Oki Electric Industry Co. Ltd.
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Koiwa Ichiro
Department Of Applied Chemistry Science And Engineering Waseda University
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Osaka Tetsuya
Department Of Applied Chemistry Science And Engineering Waseda University
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Osaka Tetsuya
Department Of Applied Chemistry Faculty Of Science And Engineering Waseda University
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Osaka T
Department Of Applied Chemistry School Of Science And Engineering Waseda University
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Osaka T
Graduate School Of Science And Engineering Waseda University
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Osaka Tetsuya
Graduate School Of Advanced Science And Engineering Waseda University
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Osaka Tetsuya
Kagami Memorial Laboratory For Materials Science And Technology Waseda University:department Of Appl
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Mita J
Research Laboratory Oki Electric Industry Corporation Ltd.
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Ono S
Saitama Univ. Urawa‐shi Jpn
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Kanehara T
Semiconductor Technology Laboratory Research And Development Group Oki Electric Industry Co. Ltd.
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Ono S
Institute Of Industrial Science University Of Tokyo
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Koiwa Ichiro
Microsystem Technology Laboratory Research And Development Group Oki Electric Industry Co. Ltd.
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Mita Juro
Microsystem Technology Laboratory Research And Development Group Oki Electric Industry Co. Ltd.
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Osaka Tetsuya
Department Of Applied Chemistry School Of Science And Engineering Waseda University
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ONO Sachiko
Advanced Research Center of Science and Engineering, Waseda University
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Iwabuchi Toshiyuki
Research And Development Group Oki Electric Industry Co. Ltd.
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KANEHARA Takao
Microsystem Technology Laboratory, Oki Electric Industry Co., Ltd.
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Ono Sachiko
Advanced Research Center Of Science And Engineering Waseda University
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Sakakibara A
Department Of Mechanical Engineering Okayama University
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Koiwa Ichiro
Semiconductor R&D Division, Semiconductor Business Group, Oki Electric Industry Co., Ltd., 550-1 Higashiasakawa-cho, Hachioji, Tokyo 193-8550, Japan
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Hashimoto A
Tokyo Ohka Kogyo Co. Ltd. Kanagawa Jpn
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Hashimoto Akihiro
Optoelectronics Technology Research Laboratory
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Osaka Tetsuya
Faculty Of Science And Engineering Waseda University
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Koiwa Ichiro
The Authors Are With Research And Development Group Oki Electric Industry Co. Ltd.
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Hashimoto A
Research & Development Department Tokyo Ohka Kogyo Co. Ltd.
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IWABUCHI Toshiyuki
Microsystem Technology Laboratory, Oki Electric Industry Co., Ltd.
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ASAMI Katsuhiko
Institute for Materials Research, Tohoku University
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Okada Y
Sumitomo Heavy Ind. Ltd. Tokyo Jpn
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Okada Y
Univ. Tsukuba Ibaraki Jpn
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Okada Y
Institute Of Applied Physics. University Of Tsukuba
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Koiwa Ichiro
Department of Applied Material and Life Science, Faculty of Engineering, Kanto Gakuin University
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Kato Haruo
Semiconductor Technology Laboratory Research And Development Group Oki Electric Industry Co. Ltd.
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Seki T
Tokyo Inst. Of Technol. Yokohama‐shi Jpn
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Okada Yasumasa
Electrotechnical Laboratory
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KOIWA Ichiro
Research and Development Group, Oki Electric Industry Co., Ltd.
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Kanehara Takao
Semiconductor R&d Division Semiconductor Business Group Oki Electric Industry Co. Ltd.
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HASHIMOTO Akira
Research & Development Department, Tokyo Ohka Kogyo Co., Ltd.
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KATO Hiroyo
Semiconductor Technology Laboratory, Research and Development Group, Oki Electric Industry Co. Ltd.
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MITA Juro
The authors are with Microsystems Technology Laboratory, Oki Electric Industry Co., Ltd.
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OSAKA Tetsuya
The authors are with the School of Science and Engineering, Waseda University
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ONO Sachiko
The authors are with Advanced Research Institute for Science and Engineering, Waseda University
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SAKAKIBARA Akira
The authors are with the School of Science and Engineering, Waseda University
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Asami Katsuhiko
Institute For Material Research Tohoku University
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Sawada Y
Research & Development Department Tokyo Ohka Kogyo Co. Ltd.
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Kato Hiroyo
Semiconductor Technology Laboratory Research And Development Group Oki Electric Industry Co. Ltd.
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浅見 勝彦
東北大学金属材料研究所
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浅見 勝彦
東北大・金研
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Kawashima A
Tohoku Univ. Ibaraki Jpn
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MITA Juro
Research Laboratory, Oki Electric Industry Co., Ltd.
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OKABE Yutaka
Department of Physics,Tohoku University
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Asami Katsuhiko
Institute For Materials Research Tohoku University
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Maeda Masakatsu
Faculty Of Science And Engineering Waseda University
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Koiwa Ichiro
Semiconductor Technology Laboratory Research And Development Group Oki Electric Industry Co. Ltd.
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Okabe Yutaka
Department Of Applied Chemistry Science And Engineering Waseda University
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Sano Kazuya
Yokohama Plant Japan Steel Works Ltd.
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Tani Kouichi
Research And Development Group Oki Electric Industry Co. Ltd.
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YAMANOBE Tomomi
Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.
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ONO Sachiko
Faculty of Science and Engineering, Waseda University
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Yamanobe Tomomi
Semiconductor Technology Laboratory Research And Development Group Oki Electric Industry Co. Ltd.
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OKADA Yukihisa
The authors are with Research and Development Group, Oki Electric Industry Co., Ltd.
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USUDA Masahiko
Department of Applied Chemistry, Science and Engineering, Waseda University
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SAWAI Hideo
Research Labs., OKI Electric Industry Co. Ltd.
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YOSHIE Tomohisa
Department of Applied ChemiStry, School of Science and Engineering, Waseda University
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HOSHIKA Takeshi
Department of Applied ChemiStry, School of Science and Engineering, Waseda University
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SAWADA Yoshihiro
Research & Development Department, Tokyo Ohka Kogyo Co., Ltd.
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SAKAKIBARA Akira
School of Science and Engineering, Waseda University
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OSAKA Tetsuya
Advanced Research Institute for Science and Engineering, Waseda University, School of Science and En
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KANEHARA Takao
The authors are with Microsystems Technology Laboratory, Oki Electric Industry Co., Ltd.
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SEKI Tomonori
The authors are with the School of Science and Engineering, Waseda University
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SAKAKIBARA Akira
Department of Applied Chemistry, Kagami Memorial Laboratory for Material Science and Technology, Was
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SEKI Tomonori
Department of Applied Chemistry, Kagami Memorial Laboratory for Material Science and Technology, Was
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YAMANISHI Keisuke
Department of Applied Chemistry, Science and Engineering, Waseda University
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Sawai Hideo
Research Labs. Oki Electric Industry Co. Ltd.
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Usuda Masahiko
Department Of Applied Chemistry Science And Engineering Waseda University
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OKADA Yukihisa
Microsystems Technology Laboratory, Research and Development Group, Oki Electric Industry Co., Ltd.
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HASHIMOTO Akira
Specialty Development Division 1, Research and Development Department, Tokyo Ohka Kogyo Co., Ltd.
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SAWADA Yoshihiro
Specialty Development Division 1, Research and Development Department, Tokyo Ohka Kogyo Co., Ltd.
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Hoshika Takeshi
Department Of Applied Chemistry School Of Science And Engineering Waseda University
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Yoshie Tomohisa
Department Of Applied Chemistry School Of Science And Engineering Waseda University
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Yamanishi Keisuke
Department Of Applied Chemistry Science And Engineering Waseda University
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Tani Kouichi
Research and Development Center, Ricoh Company Ltd.
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OSAKA Tetsuya
Advanced Research Institute for Science & Engineering
著作論文
- Effect of Annealing Method to Crystalize on Sr_Bi_Ta_2O_ Thin Film Properties Formed from Alkoxide Solution
- Orientation Control of Sr_Bi_Ta_2O_ Thin Films by Chemical Liquid Deposition
- Crystallization of Sr_Bi_Ta_O_ Thin Films by Chemical Liquid Deposition
- Orientation Control of Sr_Bi_Ta_2O_9 Thin Films by Chemical Process
- Effects of Ion Etching and Annealing in O_2 Atmosphere Following Ion Etching on Properties and Chemistry of Sr_Bi_Ta_2O_ Thin Films
- Effect of Phosphorus Content of the Magnetic and Electric Properties of Electroless Ni-P Film after Heat Treatment : Magnetism, Magnetic Materials and Devices
- Control of Crystal Orientation of Ferroelectric SrBi_2Ta_2O_9 Thin Films with Multi-Seeding Layers
- Effects of H_2 Sintering and Pt Upper Electrode on Metallic Bi Content in Sr_Bi_Ta_2O_9 Thin Films for Ferroelectric Memories Prepared by Sol-Gel Method
- Crystallization Process of Sr_Bi_Ta_2O_9 Thin Films with Different Crystal Orientation Prepared by Chemical Liquid Deposition Using Alkoxide Precursor(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Structural Defects in Sr_Bi_Ta_2O_9 Thin Film for Ferroelectric Memory(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Phase Transition in Ferroelectric SrBi_2Ta_2O_9) Thin Films with Change of Heat-treatment Temperature
- Correlation between Magnetic Properties and Composition of Electroless-Plated Cobalt Alloy Films for Perpendicular Magnetic Recording Media
- Role of Excess Bi in SrBi_2Ta_2O_9 Thin Film Prepared Using Chemical Liquid Deposition and Sol-Gel Method
- Low Voltage Operation of Ferroelectric Sr_Bi_Ta_2O_9 Thin Films Crystallized by Excimer Laser Annealing
- Preparation of Ferroelectric Sr_Bi_Ta_2O_9 Thin Films by Misted Deposition Method Using Alkoxide Solution(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- A Study on MgO Powder and MgO Liquid Binder in the Screen-Printed Protective Layer for AC-PDPs