Okada Y | Univ. Tsukuba Ibaraki Jpn
スポンサーリンク
概要
関連著者
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Okada Y
Sumitomo Heavy Ind. Ltd. Tokyo Jpn
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Okada Y
Univ. Tsukuba Ibaraki Jpn
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Okada Y
Institute Of Applied Physics. University Of Tsukuba
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Okada Yasumasa
Electrotechnical Laboratory
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Kawabe M
Nikko Materials Co. Ltd. Saitama Jpn
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Kawabe Mitsuo
Institute Of Materials Science University Of Tsukuba
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Kawabe Mitsuo
Institute Of Applied Physics University Of Tsukuba
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OKADA Yoshitaka
Institute of Applied Physics. University of Tsukuba
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Okada Yoshitaka
Institute Of Applied Physics University Of Tsukuba
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Kawabe M
Institute Of Applied Physics University Of Tsukuba
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AKAHANE Kouichi
Institute of Applied Physics, University of Tsukuba
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Akahane K
Institute Of Applied Physics University Of Tsukuba
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Lan S
The Femtosecond Technology Research Association (festa).
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Lan Sheng
Institute Of Applied Physics University Of Tsukuba
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JANG Kee-Youn
Institute of Materials Science, University of Tsukuba
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KAWAMURA Takahiro
Institute of Materials Science, University of Tsukuba
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Kawamura Tatsuo
Department Of Electrical Engineering Shibaura Institute Of Technology
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Jang Kee-youn
Institute Of Applied Physics University Of Tsukuba
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Kawamura T
Department Of Mathematics And Physics University Of Yamanashi
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Kawamura Takao
Laboratory Of Plant Physiology Graduate School Of Agriculture Kyoto University:(present Address)sumi
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Kawamura Takahiro
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Hashimoto Hideki
Department of Health Economics and Epidemiology Research, School of Public Health, The University of
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OKADA Yoshihiro
Department of Translational Research for Healthcare and Clinical Science
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LAN Sheng
Institute of Materials Science, University of Tsukuba
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MATSUSHIMA Ryoka
Department of Materials Science and Chemical Engineering, Faculty of Engineering, Shizuoka Universit
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OKAMOTO Yoshihiro
Institute of Applied Physics, University of Tsukuba
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Matsushima R
Department Of Materials Science And Chemical Engineering Faculty Of Engineering Shizuoka University
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Matsushima Ryoka
Department Of Applied Chemistry Faculty Of Engineering Shizuoka University
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Hashimoto Hideki
Department Of Health Economics And Epidemiology Research (h. Hashimoto) School Of Public Health Univ
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Okada Yoshihiro
Department Of Electronics Himeji Institute Of Technology
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Hashimoto Hideki
Department Of Applied Mathematics And Physics Graduate School Of Informatics Kyoto University
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Takahashi K
Department Of Physical Electronics Tokyo Institute Of Technology
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Takahashi K
National Inst. Res. In Inorganic Materials Ibaraki Jpn
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Wada Osamu
Materials & Electronic Device Laboratory Mitsubishi Electric Corporation
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Wada Osamu
FESTA Laboratories
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Wada O
The Department Of Electrical And Electronics Engineering Kobe University
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Wada Osamu
Fujitsu Laboratories
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Asano Tanemasa
Center For Microelectronic Systems Kyushu Institute Of Technology
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TAKAHASHI Kaoru
Department of Applied Physics, Tokyo University of Agriculture and Technology
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Wada O
The Femtosecond Technology Research Association:the Kobe University.
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SONG Hai-Zhi
Institute of Applied Physics. University of Tsukuba
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Takahashi K
Department Of Physical Electronics Tokyo Institute Of Tecnology
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HATTORI Kingo
Department of Materials Science and Chemical Engineering, Faculty of Engineering, Shizuoka Universit
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Takahashi K
Tokyo Inst. Technol. Yokohama Jpn
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Hattori K
Department Of Materials Science And Chemical Engineering Faculty Of Engineering Shizuoka University
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Koiwa Ichiro
Semiconductor Technology Laboratories Oki Electric Industry Co. Ltd.
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Koiwa Ichiro
Department Of Applied Chemistry Science And Engineering Waseda University
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Takahashi Kensuke
Department Of Electrical And Electronic Engineering Musashi Institute Of Technology
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Takahashi Kuniharu
Graduate School Of Science And Technology Niigata University
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Takahashi Kazuhiko
National Research Institute For Metals Tsukuba Laboratories:sanyo Elect. Co. Ltd.
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Takahashi Kouchiro
National Institute For Research In Inorganic Materials
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Wada Osamu
The Femtosecond Technology Research Association:the Kobe University.
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TAKAHASHI Kazuya
Institute of Applied Physics, University of Tsukuba
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Mita J
Research Laboratory Oki Electric Industry Corporation Ltd.
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Hattori K
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Takahashi Kasuke
National Laboratory For High Energy Physics
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Aoto Koji
Center For Microelectronic Systems Kyushu Institute Of Technology
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Takahashi Katsuaki
Department Of Applied Chemistry Okayama University
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HASHIGUCHI Shinji
Institute of Materials Science, University of Tsukuba
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AOTO Katsuhide
Center for Microelectronic Systems, Kyushu Institute of Technology
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OKADA Yoshihiro
Center for Microelectronic Systems, Kyushu Institute of Technology
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Hashiguchi S
Kyoto Inst. Technol. Kyoto Jpn
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TAKAHASHI Kenji
Semiconductor Research Laboratory, Pioneer Electronic Corporation
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OKAMOTO Naomichi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University
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WADA Osamu
Department of Applied Quantum Physics, Kyushu University
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Yoda Takeshi
Department of Global Health Development Policy Sciences, Institute of Tropical Medicine, Nagasaki Un
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Yoda T
Kyoto Univ. Katsura Kyoto Jpn
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Yoda Takeshi
Department Of Global Health Development Policy Sciences Institute Of Tropical Medicine Nagasaki Univ
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Wada Osamu
The Femtosecond Technology Research Association
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Wada Osamu
Department Of Applied Quantum Physics Kyushu University
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KIDO Giyuu
National Institute for Materials Science
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Kido G
National Res. Inst. Metals Tsukuba
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Kido G
National Inst. For Materials Sci. Ibaraki
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Kido Giyuu
Institute For Solid State Physics University Of Tokyo:the Research Institute For Iron Steel And Othe
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TAKAMASU Tadashi
National Institute for Materials Science, Nanomaterials Laboratory
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NISHIKAWA Satoshi
The Femtosecond Technology Research Association (FESTA)
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LAN Sheng
The Femtosecond Technology Research Association (FESTA)
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ISHIKAWA Hiroshi
The Femtosecond Technology Research Association (FESTA)
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NISHIMURA Tetsuya
The Femtosecond Technology Research Association (FESTA)
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LAN Shen
Institute of Materials Science, University of Tsukuba
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Hashimoto A
Tokyo Ohka Kogyo Co. Ltd. Kanagawa Jpn
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Hashimoto Akihiro
Optoelectronics Technology Research Laboratory
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Takamasu T
National Inst. For Materials Sci. Ibaraki
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Takamasu Tadashi
Nanomaterials Laboratory National Institute For Materials Science
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Takamasu Tadashi
Institute For Solid State Physics University Of Tokyo
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Takamasu Tadashi
National Institute For Materials Science
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Takamasu Tadashi
Tsukuba Magnet Laboratory National Institute For Materials Science
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Kido G
National Research Institute For Metals
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CHUN Yong
Institute of Materials Science, University of Tsukuba
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Chun Y
System Devices And Fundamental Research Nec Corporation
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Chun Yong
Institute Of Materials Science University Of Tsukuba
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Shimoda Masashi
Institute Of Materials Science University Of Tsukuba
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Koiwa Ichiro
Microsystem Technology Laboratory Research And Development Group Oki Electric Industry Co. Ltd.
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Koiwa Ichiro
The Authors Are With Research And Development Group Oki Electric Industry Co. Ltd.
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Sugihara Okihiro
Institute Of Multidisciplinary Research For Advanced Materials (imram) Tohoku University
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Sugihara Okihiro
Tohoku Univ. Institute Of Multidisciplinary Research For Advanced Materials
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Sugihara Okihiro
Department Of Electrical Engineering Faculty Of Science And Technology Keio University
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Sugihara Okihiro
The Graduate School Of Electronics And Technology Shizuoka University
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Nishikawa Satoshi
The Femtosecond Technology Research Association (festa).
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Nishimura Tadashi
Lsi Research & Development Laboratory Mitsubishi Electric Corporation
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Hashimoto A
Research & Development Department Tokyo Ohka Kogyo Co. Ltd.
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SAWAHARA Yoshiko
Department of Applied Physics, Faculty of Engineering, Osaka City University
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INOUE Tomokuni
Otsuka Electronics Co., Ltd.
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Nishimura T
Advanced Technology R&d Center Mitsubishi Electric Corporation
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NAKAMURA Hiromichi
Institute of Applied Physics, University of Tsukuba
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Mita Juro
Microsystem Technology Laboratory Research And Development Group Oki Electric Industry Co. Ltd.
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Shimoda M
National Institute For Materials Science
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Inoue Tomokuni
Otsuka Electronics Co. Ltd.
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OKADA Yukihisa
The authors are with Research and Development Group, Oki Electric Industry Co., Ltd.
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MITA Juro
The authors are with Microsystems Technology Laboratory, Oki Electric Industry Co., Ltd.
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Nishikawa S
The Femtosecond Technology Research Association (festa).
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OKADA Yukihisa
Microsystems Technology Laboratory, Research and Development Group, Oki Electric Industry Co., Ltd.
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HASHIMOTO Akira
Specialty Development Division 1, Research and Development Department, Tokyo Ohka Kogyo Co., Ltd.
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SAWADA Yoshihiro
Specialty Development Division 1, Research and Development Department, Tokyo Ohka Kogyo Co., Ltd.
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Kido Giyuu
The Research Institute For Iron Steel And Other Metals
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Sawada Y
Research & Development Department Tokyo Ohka Kogyo Co. Ltd.
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Shimoda M
National Inst. Materials Sci. Ibaraki Jpn
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Nakamura Hiromichi
Institute Of Applied Physics University Of Tsukuba
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Ishikawa H
Fukuyama Univ. Hiroshima Jpn
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SUZUKI Yoshiyuki
Institute of Materials Science, University of Tsukuba
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FUJIMURA Hisashi
Department of Electronic Engineering, Faculty of Engineering, Shizuoka University
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MORIOKA Motonobu
Department of Materials Science and Chemical Engineering, Faculty of Engineering, Shizuoka Universit
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Fujimura Hiroki
Faculty Of Engineering. Shizuoka University
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Kido Giyun
Institute For Solid State Physics University Of Tokyo
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Kido Giyuu
Institute For Solid State Physics University Of Tokyo:the Research Institute For Iron Steel And Othe
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Sawahara Yoshiko
Department Of Applied Physics Faculty Of Engineering Osaka City University
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Kido Giyuu
Department Of Electrical Engineering University Of Tokyo:(present Address) Institute For Solid State
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Kido Giyuu
Department Of Materical Physics Faculty Of Engneering Science Osaka University
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Kido Giyuu
Tsukuba Magnet Laboratory National Institute For Materials Science
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Kido Giyuu
National Inst. For Materials Sci. (nims)
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Niina T
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Morioka Motonobu
Department Of Materials Science And Chemical Engineering Faculty Of Engineering Shizuoka University
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Okamoto N
Shizuoka Univ. Hamamatsu Jpn
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Takamasu Tadashi
Nanophysics Group Quantum Dot Research Center National Institute For Materials Science
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Ishikawa Hiroshi
The Femotosecond Technology Research Association
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Suzuki Yoshiyuki
Institute Of Materials Science University Of Tsukuba
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Sugihara Okihiro
Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8561, Japan
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Fujimura Hisashi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8561, Japan
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Takamasu Tadashi
National Institute for Material Science, Tsukuba, Ibaraki 305-0047, Japan
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Morioka Motonobu
Department of Industrial Chemistry, Faculty of Engineering, Shizuoka University
著作論文
- Comparison of Optical Properties of In_Ga_As/GaAs(311)B Two-Dimensional Quantum Dot Superlattices and Quantum Wells
- Two-Dimensional In_Ga_As/GaAs Quantum Dot Superlattices Realized by Self-Organized Epitaxial Growth
- Effect of Charge Distribution in Quantum Dots Array on Two-Dimensional Electron Gas
- Magnetoluminescence Studies of Highly Packed InGaAs Self-organized Quantum Dots on GaAs(311)B
- The Procedure to Realize Two-Dimensional Quantum Dot Superlattices : From Incoherently Coupled to Coherently Coupled Quantum Dot Arrays
- Surfactant Effects of Atomic Hydrogen on Low-Temperature Growth of InAs on InP
- Molecular and Crystal Structures of 2-(All-trans-Retinylidene)-Indan-1,3-Dione
- Second-Harmonic Generation from Single Crystals of N-Substituted 4-Nitroanilines
- Observation of Solitonlike Excitations in All-trans-β-Carotene Single Crystals
- Fabrication of InGaN Multiple Quantum Wells Grown by Hydrogen FluX Modulation in RF Molecular Beam Epitaxy : Semiconductors
- Effects of Atomic Hydrogen on the Indium Incorporation in InGaN Grown by RF-Molecular Beam Epitaxy
- Effect of Atomic Hydrogen on GaAs Growth on GaAs(311)A Substrate in Molecular Beam Epitaxy
- Role of Excess Bi in SrBi_2Ta_2O_9 Thin Film Prepared Using Chemical Liquid Deposition and Sol-Gel Method
- Growth Mechanism of Surface Dots Self-Assembled on InP (311)B Substrate
- Effects of Atomic Hydrogen on the Growth of GaN by RF-Molecular Beam Epitaxy
- Growth of GaN by Atomic Hydrogen-Assisted Molecular Beam Epitaxy
- Preparation of Ferroelectric Sr_Bi_Ta_2O_9 Thin Films by Misted Deposition Method Using Alkoxide Solution(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Formation of Quantum Dot Structures by Atomic Hydrogen Assisted Selective Area Molecular Beam Epitaxy
- Enhanced Solid-Phase Crystallization of Amorphous Si by Plasma Treatment Using Reactive Ion Etching
- Selective Solid-Phase Crystallization of Amorphous Si by Oxygen Plasma Treatment