Chun Y | System Devices And Fundamental Research Nec Corporation

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概要

• 同名の論文著者
• System Devices And Fundamental Research Nec Corporationの論文著者

関連著者

• Chun Y

  System Devices And Fundamental Research Nec Corporation

• Kawabe M

  Nikko Materials Co. Ltd. Saitama Jpn

• Kawabe Mitsuo

  Institute Of Applied Physics University Of Tsukuba

• Okada Y

  Sumitomo Heavy Ind. Ltd. Tokyo Jpn

• Okada Y

  Institute Of Applied Physics. University Of Tsukuba

• Okada Yoshitaka

  Institute Of Applied Physics University Of Tsukuba

• Chun Yong

  Institute Of Materials Science University Of Tsukuba

• Kawabe M

  Institute Of Applied Physics University Of Tsukuba

• Uemura T

  Sumitomo Electric Ind. Ltd. Hyogo Jpn

• Uemura T

  Nec Corp. Ibaraki Jpn

• Uemura Tetsuya

  System Devices And Fundamental Research Nec Corporation

• Kawabe Mitsuo

  Institute Of Materials Science University Of Tsukuba

• OKADA Yoshitaka

  Institute of Applied Physics. University of Tsukuba

• CHUN Yong

  Institute of Materials Science, University of Tsukuba

• Baba T

  Fundamental Research Laboratories Nec Corporation:(present Office)silicon System Laboratories Nec Co

• Uemura Tetsuya

  Fundamental Research Laboratories Nec Corporation

• Okada Y

  Univ. Tsukuba Ibaraki Jpn

• BABA Toshio

  Fundamental Research Laboratories, NEC Corporation

• CHUN Yong

  System Devices and Fundamental Research, NEC Corporation

• BABA Toshio

  System Devices and Fundamental Research, NEC Corporation

• CHUN Yong

  Fundamental Research Laboratories, NEC Corporation

• Chun Yong

  System Devices And Fundamental Research Nec Corporation

• Baba Toshio

  Fundamental And Environmental Research Laboratories Nec Corporation

• Okada Yasumasa

  Electrotechnical Laboratory

• Sugaya Takeyoshi

  Institute Of Materials Science University Of Tsukuba

• Sugaya T

  Photonics Research Institute National Institute Of Advanced Industrial Science And Technology

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著作論文

• Surfactant Effects of Atomic Hydrogen on Low-Temperature Growth of InAs on InP
• Enhanced Two-Dimensional Growth of GaAs on InP by Molecular Beam Epitaxy with Atomic Hydrogen Irradiation
• Fabrication of Self-Aligned Surface Tunnel Transistors with a 80-nm Gate Length
• Self-Aligned Surface Tunnel Transistors Fabricated by a Regrowth Technique
• Low Temperature Surface Cleaning of InP by Irradiation of Atomic Hydrogen

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