Formation of Quantum Dot Structures by Atomic Hydrogen Assisted Selective Area Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
We have fabricated InGaAs/GaAs quantum dot structures by atomic hydrogen assisted selective area molecular beam epitaxy (H-MBE). First, GaAs pyramidal structures with fourfold symmetric {011} facet sidewalls have been formed in (001) GaAs by using SiO_2 as a mask with square openings. The shape and width of pyramidal structures observed by using a scanning electron microscpe (SEM) and atomic force microscope (AFM) have been determined to be uniform. Using these pyramids, InGaAs quantum dots have been overgrown on top of the pyramids under different growth conditions. Photoluminescence (PL) spectra have measured in order to study PL peaks arising from quantum dots. Furthermore, we have fabricated GaAs quantum dot array structures coupled to quantum wire networks by our H-MBE selective area growth technique.
- 社団法人応用物理学会の論文
- 1997-11-15
著者
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Kawabe M
Nikko Materials Co. Ltd. Saitama Jpn
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Kawabe Mitsuo
Institute Of Materials Science University Of Tsukuba
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Kawabe Mitsuo
Institute Of Applied Physics University Of Tsukuba
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OKADA Yoshitaka
Institute of Applied Physics. University of Tsukuba
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Okada Y
Sumitomo Heavy Ind. Ltd. Tokyo Jpn
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Okada Y
Univ. Tsukuba Ibaraki Jpn
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Okada Y
Institute Of Applied Physics. University Of Tsukuba
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Okada Yoshitaka
Institute Of Applied Physics University Of Tsukuba
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Shimoda Masashi
Institute Of Materials Science University Of Tsukuba
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Kawabe M
Institute Of Applied Physics University Of Tsukuba
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Shimoda M
National Institute For Materials Science
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Okada Yasumasa
Electrotechnical Laboratory
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Shimoda M
National Inst. Materials Sci. Ibaraki Jpn
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SUZUKI Yoshiyuki
Institute of Materials Science, University of Tsukuba
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Suzuki Yoshiyuki
Institute Of Materials Science University Of Tsukuba
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