Fermi Level Effect on Compositional Disordering of AlAs/GaAs Superlattice
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概要
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The Fermi level effect on impurity-induced compositional disordering of the AlAs/GaAs superlattice has been investigated by studying the disordering at the surface. It is shown that the Si-induced disordering is suppressed at the surface and the thickness of the suppressed layer depends on the Si concentration; that is, the superlattice with the larger Si concentration has the thinner suppressed layer. These results indicate that the surface suppression effect originates from the surface depletion layer where the Fermi level is pinned near the midgap, and that the intermixing is explained by the Fermi level effect.
- 社団法人応用物理学会の論文
- 1990-07-20
著者
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Kawabe Mitsuo
Institute Of Applied Physics University Of Tsukuba
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Ogawa Kazuhisa
Institute Of Materials Science University Of Tsukuba
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