Initial Growth and Dislocation Accommodation of GaAs on Si(100) by Molecular Beam Epilaxy
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概要
- 論文の詳細を見る
- 1987-05-20
著者
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Bando Y
Advanced Materials Laboratory And Nanomaterials Laboratory National Institute For Materials Science
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Bando Yoshio
National Institute Of Materials Science
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Kawabe Mitsuo
Institute Of Materials Science University Of Tsukuba
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Kawabe Mitsuo
Institute Of Applied Physics University Of Tsukuba
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TAKASUGI Hidetoshi
Institute of Materials Science, University of Tsukuba
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Bando Yoshio
National Institute For Materials Science Advanced Materials Laboratory
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Bando Yoshio
International Center For Materials Nanoarchitectonics National Institute For Materials Science (nims
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Takasugi Hidetoshi
Institute Of Materials Science University Of Tsukuba
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Bando Yoshio
Advanced Materials Laboratory And Nanomaterials Laboratory National Institute For Materials Science
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Bando Yoshio
Advanced Materials Laboratory National Institute For Materials Science
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