Be Doping Effect on Growth Kinetics of GaAs Grown by MBE
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概要
- 論文の詳細を見る
In order to investigate the Be doping effect on growth kinetics of GaAs grown by molecular beam epitaxy, measurements of the intensity oscillations in reflection high-energy electron diffraction and of the depth profile of Be by secondary ion mass spectroscopy have been carried out. Be has been accumulated at the growth front and the accumulated Be has induced surface roughness. A critical surface concentration of Be to affect the growth kinetics has been estimated at 0.02 monolayer. The mechanism for the Be-induced roughness at the growth front is discussed.
- 社団法人応用物理学会の論文
- 1986-01-20
著者
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Kawabe Mitsuo
Institute Of Materials Science University Of Tsukuba
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Kawabe Mitsuo
Institute Of Applied Physics University Of Tsukuba
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Kawabe Mitsuo
Institute Of Material Science University Of Tsukuba
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Iimura Yasufumi
Institute Of Material Science University Of Tsukuba
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