Reduction of a Highly-Resistive Layer at an Interrupted-Interface of GaAs Grown by MBE
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概要
- 論文の詳細を見る
- 1986-01-20
著者
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高杉 英利
NTTコミュニケーションズ(株)
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Kawabe Mitsuo
Institute Of Materials Science University Of Tsukuba
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Kawabe Mitsuo
Institute Of Applied Physics University Of Tsukuba
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Iimura Yasufumi
Institute Of Material Science University Of Tsukuba
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TAKASUGI Hidetoshi
Institute of Materials Science, University of Tsukuba
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Iimura Yasufumi
Institute Of Materials Science University Of Tsukuba
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Takasugi Hidetoshi
Institute Of Materials Science University Of Tsukuba
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