Selective Growth of GaAs by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
Selective epitaxial growth of GaAs on patterned GaAs substrates covered with SiN_x have been demonstrated at 580℃ by using atomic hydrogen irradiation in molecular beam epitaxy. The mechanism of the selective growth is mainly due to the re-evaporation of GaAs from the mask, SiN_x. Re-evaporation rate of GaAs from the SiN_x surface is larger than that from the SiO_2 surface, and hence the selective growth of GaAs can be more easily achieved using SiN_x mask. The epitaxial patterns of GaAs have clear crystal facets. In the line and space patterns along [110], (11^^-0), (111)B and (211)B faces appear and in the [11^^-0] line, (311)A and (111)A faces appear. There are no edge peaking and the side wall definitely reflects the mask edge boundary.
- 社団法人応用物理学会の論文
- 1992-06-01
著者
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Kawabe M
Nikko Materials Co. Ltd. Saitama Jpn
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Kawabe Mitsuo
Institute Of Applied Physics University Of Tsukuba
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Okada Y
Sumitomo Heavy Ind. Ltd. Tokyo Jpn
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Okada Y
Institute Of Applied Physics. University Of Tsukuba
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Okada Yoshitaka
Institute Of Applied Physics University Of Tsukuba
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Kawabe M
Institute Of Applied Physics University Of Tsukuba
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Sugaya Takeyoshi
Institute Of Materials Science University Of Tsukuba
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Sugaya T
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
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