Low-Temperature Cleaning of GaAs Substrate by Atomic Hydrogen Irradiation
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概要
- 論文の詳細を見る
Low temperature cleaning of GaAs substrate by atomic hydrogen irradiation has been demonstrated. Atomic hydrogen was provided by dissociation of hydrogen gas, which was carried out in a simple cracking cell with a 1500 ℃ tungsten filament. Auger electron spectroscopy showed that carbon was removed at 200℃ and oxygen was removed at 400℃ by 30-min atomic hydrogen irradiation. The surface cleaning of GaAs was confirmed by the change of RHEED pattern from halo to streak after the hydrogen irradiation.
- 社団法人応用物理学会の論文
- 1991-03-01
著者
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Kawabe M
Nikko Materials Co. Ltd. Saitama Jpn
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Kawabe Mitsuo
Insutitute F Materials Science University Of Tsukuba
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Sugaya Takeyoshi
Insutitute f Materials Science, University of Tsukuba
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Sugaya Takeyoshi
Insutitute F Materials Science University Of Tsukuba
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