Conductance Fluctuations in GaAs/AlGaAs Narrow Wires in Quasi-Ballistic Regime

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1992-12-30

著者

• Aoyagi Y

  Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology

• Ishibashi K

  Inst. Physical And Chemical Res. (riken) Saitama Jpn

• Aoyagi Y

  Inst. Physics And Chemical Res. (riken) Wako Jpn

• Kawabe M

  Univ. Tsukuba Ibaraki Jpn

• Kawabe M

  Nikko Materials Co. Ltd. Saitama Jpn

• Kawabe Mitsuo

  Institute Of Materials Science University Of Tsukuba

• Kawabe Mitsuo

  Institute Of Applied Physics University Of Tsukuba

• AOYAGI Yoshinobu

  Institute of Physical and Chemical Research (RIKEN)

• SUGANO Takuo

  Frontier Research Program, The Institute of Physical and Chemical Research (RIKEN)

• Aoyagi Y

  Riren (the Institute Of Physical And Chemical Research)

• ISHIBASHI Koji

  Advanced Device Laboratory, The Institute of Physical and Chemical Research (RIKEN)

• Ishibashi K

  Riken Saitama Jpn

• Aoyagi Yoshinobu

  Nanoelectronic Materials Laboratory Frontier Research Program Riken

• BIRD Jonathan

  Frontier Research Program, RIKEN

• Bird Jonathan

  Nano-electronics Riken

• ISHIBASHI Koji

  Institute of Physical and Chemical Research (RIKEN)

• 0CHIAI Yuichi

  Institute of Materials Science, University of Tsukuba

• ONISHI Taizo

  Frontier Researhc Program, RIKEN

• Ishibashi Koji

  Semiconductors Laboratory The Institute Of Physical And Chemical Research (riken)

• Aoyagi Yoshinobu

  Institute Of Physical And Chemical Research

• 0chiai Yuichi

  Institute Of Materials Science University Of Tsukuba:(present Address) Department Of Materials Scien

• Onishi T

  Matsushita Electric Industrial Co. Ltd. Kyoto Jpn

• Sugano T

  Nanoelectronic Materials Laboratory Frontier Research Program Riken

関連論文

• Lateral-Coupling-Induced Modification of Density of States and Exciton Dynamics in High-Density Ordered In_ Ga_ As/GaAs(311)B Quantum Dot Arrays(Optical Properties of Condensed Matter)
• Comparison of Optical Properties of In_Ga_As/GaAs(311)B Two-Dimensional Quantum Dot Superlattices and Quantum Wells
• Two-Dimensional In_Ga_As/GaAs Quantum Dot Superlattices Realized by Self-Organized Epitaxial Growth
• Effect of Charge Distribution in Quantum Dots Array on Two-Dimensional Electron Gas
• Magnetoluminescence Studies of Highly Packed InGaAs Self-organized Quantum Dots on GaAs(311)B
• The Procedure to Realize Two-Dimensional Quantum Dot Superlattices : From Incoherently Coupled to Coherently Coupled Quantum Dot Arrays
• Beating of the Shubnikov-de Haas Oscillations in GaAs/AlGaAs Quantum-Dot Arrays
• Modeling of Electron Transport in Corrugated Quantum Wires
• Ballistic Weak Localization and Wave Function Scarring in Quantum Wires
• High-Quality GaAs Films on Si Substrates Grown by Atomic Hydrogen-Assisted Molecular Beam Epitaxy for Solar Cell Applications
• Anisotropic Transport Properties in Twin-Free Bi_2Sr_2CaCu_2O_x Thin Films on Tilted LaAlO_3 (001) Substrates
• Is There a Magnetic-Field-Induced Breakdown in the Universality of Conductance Fluctuations?
• Fabrication of Periodic Structures in GaAs by Focused-Ion-Beam Implantation : Microfabrication and Physics
• Fabrication of Periodic Structures in GaAs by Focused-Ion-Beam Implantation
• 40 nm Width Structure of GaAs Fabricated by Fine Focused Ion Beam Lithography and Chlorine Reactive Ion Etching : Techniques, Instrumentations and Measurement
• 30 nm Line Fabrication on PMMA Resist by Fine Focused Be Ion Beam
• Electronic Properties of Polysilane Calculated with the Real-Time Real-Space Higher-Order Finite-Difference Method
• Fast Algorithm for Calculating Two-Photon Absorption Spectra by Real-Time Real-Space Higher-Order Finite-Difference Method
• Composition Control of Al_xGa_As and New Type of Superlattice by Pulsed Molecular Beam
• Surfactant Effects of Atomic Hydrogen on Low-Temperature Growth of InAs on InP
• Enhanced Two-Dimensional Growth of GaAs on InP by Molecular Beam Epitaxy with Atomic Hydrogen Irradiation
• Probing the Discrete Level Spectrum of Open Quantum Dots
• Phase Breaking of Coherent Electron Waves in Dot Array Systems ( Quantum Dot Structures)
• The Role of Electron Phase Coherence in Quantum Transport through Open Ballistic Cavities ( Quantum Dot Structures)
• Quantum Transport in Single and Multiple Quantum Dots ( Quantum Dot Structures)
• Carrier Transport in Nanodevices
• Trajectory Transition Due to Gate Depletion in Corrugation Gated Quantum Wires
• Carrier Transport in Nanoscale Structures
• Electron Wave Interference in Ballistic and Quasi-Ballistic Nanostructures
• Zero-Current Voltage Fluctuations in Quantum Dots at High Magnetic Fields
• Study of Scattering Processes in Quantum Wires by a Correlation Field Analysis of the Phase Coherent Interferences
• The Magnetic Field Dependent Characteristics of Conductance Fluctuations in Ballistic Quantum Dots
• Experimental Determination of the Conduction Width in Quasi Ballistic Wires
• Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam excited Plasma(EBEP) System : Etching and Deposition Technology
• Quantum Dots and Their Tunnel Barrier in Semiconducting Single-Wall Carbon Nanotubes with a p-Type Behavior
• Fabrication of a Single-Electron Inverter in Single-Wall Carbon Nanotubes
• Quantum dot transport of semiconducting single-wall carbon nanotubes
• 招待講演 Carbon nanotubes for quantum-dot devices
• 招待講演 Carbon nanotubes for quantum-dot devices
• Quantum Dot Formation in Single-Wall Carbon Nanotubes
• Quantum Dots in Carbon Nanotubes
• Characterization of Small Superconducting Rings and Its Possible Application to New Single Flux Quantum Devices
• Observation of Aharonov-Bohm Oscillations in the Magnetoresistance of a GaAs/AlGaAs Quantum Dot
• The Transmission Properties of Quantum Dots at High Magnetic Fields
• Interference Area of Universal Conductance Fluctuations in Narrow GaAs/AlGaAs Wires
• Conductance Fluctuations in GaAs/AlGaAs Narrow Wires in Quasi-Ballistic Regime
• Cracking Efficiency of Hydrogen with Tungsten Filament in Molecular Beam Epitaxy
• Atomic Hydrogen-Assisted GaAs Molecular Beam Epitaxy
• GaAs/AlGaAs Quantum Wells Grown by Low-Temperature Molecular Beam Epitaxy with Atomic Hydrogen Irradiation
• 4-Monolayer-Height Layer-by-Layer Growth and Increase of the Critical Thickness of Ge Heteroepitaxy on Boron-Preadsorbed Si(111) Surface
• Digital Etching Using KrF Excimer Laser: Approach to Atomic-Order-Controlled Etching by Photo Induced Reaction
• New Etching System with a Large Diameter Using Electron Beam Excited Plasma
• Direct Observation of Self-Limiting Gallium Deposition on GaAs during Laser-Atomic Layer Epitaxial Processing
• Reversible Reconstruction Changes in GaAs Surfaces due to Hydrogen Termination
• Study of Surface Processes in the Digital Etching of GaAs
• Initial Growth and Dislocation Accommodation of GaAs on Si(100) by Molecular Beam Epilaxy
• Initial Stage and Domain Structure of GaAs Grown on Si(100) by Molecular Beam Epitaxy
• Reduction of a Highly-Resistive Layer at an Interrupted-Interface of GaAs Grown by MBE
• Transition from Semi-Classical to Quantum Transport in Quasi-Ballistic Wires
• Fabrication of InGaN Multiple Quantum Wells Grown by Hydrogen FluX Modulation in RF Molecular Beam Epitaxy : Semiconductors
• Effects of Atomic Hydrogen on the Indium Incorporation in InGaN Grown by RF-Molecular Beam Epitaxy
• Reduction Mechanism of Dislocation Density in GaAs Films on Si Substrates
• Self-Annihilation of Antiphase Boundary in GaAs on Si(100) Grown by Molecular Beam Epitaxy
• Array of the Self-Organized InGaAs Quantum Dots on GaAs (311)B Substrates by Atomic Hydrogen-Assisted Molecular Beam Epitaxy
• Anisotropic Lateral Growth of GaAs by Molecular Beam Epitaxy
• A Molecular Beam Epitaxy Approach to Quantum Dot Arrays
• Fabrication of GaAs Quantum Wire Structures by Hydrogen-Assisted Molecular Beam Epitaxy
• Coupling Characteristics of Semiconductor Coupled Quantum Dots in Coulomb Blockade Regime
• Effect of Microwave Irradiations on Coupled Quantum Dots
• Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System : Etching and Deposition Technology
• Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System
• New High Current Low Energy Ion Source
• Epitaxial Growth of Al on (NH_4)_2S_x-Treated GaAs
• Effect of Atomic Hydrogen on GaAs Growth on GaAs(311)A Substrate in Molecular Beam Epitaxy
• Correlation Field Analysis of the Influence of Device Geometry and Bulk Disorder on Electron Interference in Quantum Wires
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• Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Superconducting Films by Molecular Beam Epitaxy
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• Shubnikov-de Haas Oscillations in a Narrow GaAs/AlGaAs Wire
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• Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing
• Photo-Annealing of Fatigue in Photoluminescence of Hydrogenated Amorphous Silicon
• Low Temperature Magnetoresistance of a Quasi-Ballistic Narrow Wire Confined by Split Metal Gates
• Size Dependence of Universal Conductance Fluctuations in Narrow N^+ -GaAs Wires : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Localization, Mesoscopic Systems
• Dynamic Behavior of 30-ps Pulsed-Laser Annealing in Ion-Implanted Si
• Low-Temperature Cleaning of GaAs Substrate by Atomic Hydrogen Irradiation
• Growth Mechanism of Surface Dots Self-Assembled on InP (311)B Substrate
• Effects of Atomic Hydrogen on the Growth of GaN by RF-Molecular Beam Epitaxy
• Growth of GaN by Atomic Hydrogen-Assisted Molecular Beam Epitaxy
• Formation of Quantum Dot Structures by Atomic Hydrogen Assisted Selective Area Molecular Beam Epitaxy
• Numerical Study of the Charge Distribution in a Quantum Wire Consisting a Junction of Wide-Narrow Geometry
• Ab Initio Cluster Study of the Interaction of Hydrogen with the GaAs(100) Surface
• Maskless Ion Implantation of Cerium by Focused Ion Beam : Techniques, Instrumentations and Measurement
• Elementary Processes in Atomic Hydrogen-Assisted GaAs Molecular Beam Epitaxy
• Low Temperature Surface Cleaning of InP by Irradiation of Atomic Hydrogen
• Atomic Image Observation of Hydrogen-Saturated Si(100) Prepared by Atomic Hydrogen Irradiation
• Selective Growth of GaAs by Molecular Beam Epitaxy
• Low Dislocation Density GaAs on Vicinal Si(100) Grown by Molecular Beam Epitaxy with Atomic Hydrogen Irradiation
• Low-Temperature Substrate Annealing of Vicinal Si(100) for Epitaxial Growth of GaAs on Si

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