Observation of Aharonov-Bohm Oscillations in the Magnetoresistance of a GaAs/AlGaAs Quantum Dot

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-05-15

著者

• Bird J

  Department Of Electrical Engineering University At Buffalo

• Aoyagi Y

  Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology

• Ishibashi K

  Inst. Physical And Chemical Res. (riken) Saitama Jpn

• Aoyagi Y

  Inst. Physics And Chemical Res. (riken) Wako Jpn

• AOYAGI Yoshinobu

  Nanoelectronic Materials Laboratory, RIKEN

• SUGANO Takuo

  Nanoelectronic Materials Laboratory, RIKEN

• BIRD Jonathan

  Nanoelectronics Materials Laboratory, Frontier Research Program, RIKEN

• ISHIBASHI Koji

  Nanoelectronics Materials Laboratory, Frontier Research Program, RIKEN

• Aoyagi Y

  Riren (the Institute Of Physical And Chemical Research)

• ISHIBASHI Koji

  Advanced Device Laboratory, The Institute of Physical and Chemical Research (RIKEN)

• Ishibashi K

  Riken Saitama Jpn

• Aoyagi Yoshinobu

  Nanoelectronic Materials Laboratory Frontier Research Program Riken

• Bird Jonathan

  Nano-electronics Riken

• Bird Jonathan

  Nanoelectronics Materials Laboratory Frontier Research Program Riken

• Ishibashi Koji

  Semiconductors Laboratory The Institute Of Physical And Chemical Research (riken)

• Sugano T

  Nanoelectronic Materials Laboratory Frontier Research Program Riken

• Sugano Takuo

  Nanoelectronic Materials Laboratory, Frontier Research Program, RIKEN

関連論文

• 31p-N-2 The Spectral Characteristics of Conductance Fluctuations in Ballistic Quantum Dots
• Magnetic Field in Direct- and Indirect-Gap Semiconductor Quantum Dots
• Laser Surface Cleaning in Air: Mechanisms and Applications
• Growth of Ultrathin Silver Films by Excimer-Laser-Induced Decomposition of Silver Acetate in Air
• Excimer-Laser Removal of SiO_2 Patterns from GaAs Substrates
• Optical, Electrical and Structural Investigations of the Transition from Amorphous to Microcrystalline Silicon
• Violet and Blue Light Emissions from Nanocrystalline Silicon Thin Films
• Effect of a Magnetic Field on the Excitonic Luminescence Decay Time in a GaAs-Al_xGa_As Quantum Well
• Beating of the Shubnikov-de Haas Oscillations in GaAs/AlGaAs Quantum-Dot Arrays
• Modeling of Electron Transport in Corrugated Quantum Wires
• Ballistic Weak Localization and Wave Function Scarring in Quantum Wires
• Observation of Quantum Level Spectrum for Silicon Double Single-Electron Transistors
• Is There a Magnetic-Field-Induced Breakdown in the Universality of Conductance Fluctuations?
• Fabrication of Periodic Structures in GaAs by Focused-Ion-Beam Implantation : Microfabrication and Physics
• Fabrication of Periodic Structures in GaAs by Focused-Ion-Beam Implantation
• 40 nm Width Structure of GaAs Fabricated by Fine Focused Ion Beam Lithography and Chlorine Reactive Ion Etching : Techniques, Instrumentations and Measurement
• 30 nm Line Fabrication on PMMA Resist by Fine Focused Be Ion Beam
• Electronic Properties of Polysilane Calculated with the Real-Time Real-Space Higher-Order Finite-Difference Method
• Fast Algorithm for Calculating Two-Photon Absorption Spectra by Real-Time Real-Space Higher-Order Finite-Difference Method
• Chaotic Behavior in the Magneto-Resistance of Quantum Dot and Quantum Point Contact(Quantum Mechanics and Chaos)
• Zero Field Magnetoresistance Peaks in Open Quantum Dots: Weak Localization or a Fundamental Property?
• Probing the Discrete Level Spectrum of Open Quantum Dots
• Theoretical Considerations of Electron Transport in Single and Multiple Quantum Dots
• Wave Function Scarring in Open Ballistic Quantum Dots ( Quantum Dot Structures)
• Phase Breaking of Coherent Electron Waves in Dot Array Systems ( Quantum Dot Structures)
• The Role of Electron Phase Coherence in Quantum Transport through Open Ballistic Cavities ( Quantum Dot Structures)
• Quantum Transport in Single and Multiple Quantum Dots ( Quantum Dot Structures)
• Carrier Transport in Nanodevices
• Trajectory Transition Due to Gate Depletion in Corrugation Gated Quantum Wires
• Carrier Transport in Nanoscale Structures
• Electron Wave Interference in Ballistic and Quasi-Ballistic Nanostructures
• Zero-Current Voltage Fluctuations in Quantum Dots at High Magnetic Fields
• Study of Scattering Processes in Quantum Wires by a Correlation Field Analysis of the Phase Coherent Interferences
• The Magnetic Field Dependent Characteristics of Conductance Fluctuations in Ballistic Quantum Dots
• Experimental Determination of the Conduction Width in Quasi Ballistic Wires
• Microfabricated Submicron Al-Filament Biprism as Applied to Electron Holography : Micro/nanofabrication and Devices
• Microfabricated Submicron Al-Filament Biprism as Applied to Electron Holography
• Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam excited Plasma(EBEP) System : Etching and Deposition Technology
• Quantum Dots and Their Tunnel Barrier in Semiconducting Single-Wall Carbon Nanotubes with a p-Type Behavior
• Fabrication of a Single-Electron Inverter in Single-Wall Carbon Nanotubes
• Quantum dot transport of semiconducting single-wall carbon nanotubes
• 招待講演 Carbon nanotubes for quantum-dot devices
• 招待講演 Carbon nanotubes for quantum-dot devices
• Quantum Dot Formation in Single-Wall Carbon Nanotubes
• Quantum Dots in Carbon Nanotubes
• Characterization of Small Superconducting Rings and Its Possible Application to New Single Flux Quantum Devices
• Observation of Aharonov-Bohm Oscillations in the Magnetoresistance of a GaAs/AlGaAs Quantum Dot
• The Transmission Properties of Quantum Dots at High Magnetic Fields
• Interference Area of Universal Conductance Fluctuations in Narrow GaAs/AlGaAs Wires
• Conductance Fluctuations in GaAs/AlGaAs Narrow Wires in Quasi-Ballistic Regime
• Low Pressure Chemical Vapor Deposition of Single-Wall Carbon Nanotubes
• Digital Etching Using KrF Excimer Laser: Approach to Atomic-Order-Controlled Etching by Photo Induced Reaction
• New Etching System with a Large Diameter Using Electron Beam Excited Plasma
• Direct Observation of Self-Limiting Gallium Deposition on GaAs during Laser-Atomic Layer Epitaxial Processing
• Reversible Reconstruction Changes in GaAs Surfaces due to Hydrogen Termination
• Study of Surface Processes in the Digital Etching of GaAs
• Radical-Beam-Induced Surface Reaction Processes of Porous Si
• Development and Applications of a Compact Electron Cyclotron Resonance Source : Etching
• Transition from Semi-Classical to Quantum Transport in Quasi-Ballistic Wires
• Composition Change of Indium Oxide Film by Triethylgallium Irradiation Prepared for In Situ Selective Epitaxy Use
• Thin Gallium Oxide Film Deposited in Vacuum for In Situ Process Use
• Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices ( Quantum Dot Structures)
• Single Electron Device with Asymmetric Tunnel Barriers
• Alignment Control of a Liquid Crystal on a Photosensitive Polyvinylalcohol Film
• Band-Gap Tuning of an Individual Single-Walled Carbon Nanotube with Uniaxial Strain
• Electric properties of single-walled carbon nanotube film field effect transistors with various work function electrodes : a comparison between pristine and potassium-encapsulated nanotubes
• Electronic Transport of a Carbon Nanotube Quantum Dot in Different Coupling Regimes
• Local Change of Carbon Nanotube-Metal Contacts by Current Flow through Electrodes
• Coupling Characteristics of Semiconductor Coupled Quantum Dots in Coulomb Blockade Regime
• Effect of Microwave Irradiations on Coupled Quantum Dots
• Enhancement of the 15.4 nm Line of the Lithiumlike Aluminum Recombining Plasma Laser using a Half Cavity
• Enhancement of Soft X-Ray Emission from Al Plasma by Pulse Train Laser Irradiation
• Observation of Soft X-Ray Amplified Spontaneous Emission in a Recombining Si Plasma Pumped by a Low-Power Laser
• Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System : Etching and Deposition Technology
• Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System
• New High Current Low Energy Ion Source
• Correlation Field Analysis of the Influence of Device Geometry and Bulk Disorder on Electron Interference in Quantum Wires
• On the Realization of Quantum Computing Devices with Carbon Nanotube Quantum Dots(New System Paradigms for Integrated Electronics)
• The Influence of Injection Properties on the Electron Scattering Dynamics of Ballistic Cavities
• Shubnikov-de Haas Oscillations in a Narrow GaAs/AlGaAs Wire
• Aperiodic Conductance Fluctuations in a Narrow GaAs/AlGaAs Wire
• Low Temperature Magnetoresistance of a Quasi-Ballistic Narrow Wire Confined by Split Metal Gates
• Size Dependence of Universal Conductance Fluctuations in Narrow N^+ -GaAs Wires : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Localization, Mesoscopic Systems
• Dynamic Behavior of 30-ps Pulsed-Laser Annealing in Ion-Implanted Si
• Transport Characteristic Control of Field-Effect Transistors with Single-Walled Carbon Nanotube Films Using Electrode Metals with Low and High Work Functions
• Numerical Study of the Charge Distribution in a Quantum Wire Consisting a Junction of Wide-Narrow Geometry
• Ab Initio Cluster Study of the Interaction of Hydrogen with the GaAs(100) Surface
• Maskless Ion Implantation of Cerium by Focused Ion Beam : Techniques, Instrumentations and Measurement
• Transition from Semi-Classical to Quantum Transport in Quasi-Ballistic Wires
• 31p-YA-2 TUNABLE CHAOS IN MESOSCOPIC SEMICONDUCTOR BILLIARDS

もっと見る 閉じる

スポンサーリンク