31p-N-2 The Spectral Characteristics of Conductance Fluctuations in Ballistic Quantum Dots
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 1995-03-16
著者
-
Bird J
Arizona State Univ. Arizona
-
Bird J.p
理化学研究所
-
Bird JP
Nanoelectronics Materials Laboratory, RIKEN
-
Ishibashi K
Nanoelectronics Materials Laboratory, RIKEN
-
Ochiai Y
Department of Materials Science, Chiba University
-
Aoyagi Y
Nanoelectronics Materials Laboratory, RIKEN
-
Sugano T
Nanoelectronics Materials Laboratory, RIKEN
-
Aoyagi Y
理化学研究所
-
Sugano T
理化学研究所
-
Ishibashi K
Semiconductor Laboratory Riken
-
Ochiai Y
Department Of Materials Technology & Center For Frontier Electronics And Photonics Chiba Univers
-
Sugano T
Nanoelectronic Materials Laboratory Frontier Research Program Riken
-
Ochiai Y
Department Of Materials Science Chiba University
関連論文
- 31p-N-2 The Spectral Characteristics of Conductance Fluctuations in Ballistic Quantum Dots
- 31a-N-11 Influence of Landau terraces on backscattering in a quantum dot
- 28p-L-9 Magnetotransport Studies of Electron-interaction & Geometry Related Effects in Semiconductor Quantum Dots
- Magnetic Field in Direct- and Indirect-Gap Semiconductor Quantum Dots
- Optical, Electrical and Structural Investigations of the Transition from Amorphous to Microcrystalline Silicon
- Violet and Blue Light Emissions from Nanocrystalline Silicon Thin Films
- Effect of a Magnetic Field on the Excitonic Luminescence Decay Time in a GaAs-Al_xGa_As Quantum Well
- Modeling of Electron Transport in Corrugated Quantum Wires
- Ballistic Weak Localization and Wave Function Scarring in Quantum Wires
- Is There a Magnetic-Field-Induced Breakdown in the Universality of Conductance Fluctuations?
- Probing the Discrete Level Spectrum of Open Quantum Dots
- Phase Breaking of Coherent Electron Waves in Dot Array Systems ( Quantum Dot Structures)
- The Role of Electron Phase Coherence in Quantum Transport through Open Ballistic Cavities ( Quantum Dot Structures)
- Quantum Transport in Single and Multiple Quantum Dots ( Quantum Dot Structures)
- Carrier Transport in Nanodevices
- Trajectory Transition Due to Gate Depletion in Corrugation Gated Quantum Wires
- Carrier Transport in Nanoscale Structures
- Electron Wave Interference in Ballistic and Quasi-Ballistic Nanostructures
- Zero-Current Voltage Fluctuations in Quantum Dots at High Magnetic Fields
- Study of Scattering Processes in Quantum Wires by a Correlation Field Analysis of the Phase Coherent Interferences
- The Magnetic Field Dependent Characteristics of Conductance Fluctuations in Ballistic Quantum Dots
- Experimental Determination of the Conduction Width in Quasi Ballistic Wires
- Characterization of Small Superconducting Rings and Its Possible Application to New Single Flux Quantum Devices
- Observation of Aharonov-Bohm Oscillations in the Magnetoresistance of a GaAs/AlGaAs Quantum Dot
- The Transmission Properties of Quantum Dots at High Magnetic Fields
- Interference Area of Universal Conductance Fluctuations in Narrow GaAs/AlGaAs Wires
- Conductance Fluctuations in GaAs/AlGaAs Narrow Wires in Quasi-Ballistic Regime
- Digital Etching Using KrF Excimer Laser: Approach to Atomic-Order-Controlled Etching by Photo Induced Reaction
- Direct Observation of Self-Limiting Gallium Deposition on GaAs during Laser-Atomic Layer Epitaxial Processing
- Transition from Semi-Classical to Quantum Transport in Quasi-Ballistic Wires
- Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices ( Quantum Dot Structures)
- Single Electron Device with Asymmetric Tunnel Barriers
- Alignment Control of a Liquid Crystal on a Photosensitive Polyvinylalcohol Film
- Correlation Field Analysis of the Influence of Device Geometry and Bulk Disorder on Electron Interference in Quantum Wires
- Bonding Process for Nanoscale Wiring Using Carbon Nanotube by STM Tip
- 31a-N-11 Influence of Landau terraces on backscattering in a quantum dot