Maskless Ion Implantation of Cerium by Focused Ion Beam : Techniques, Instrumentations and Measurement
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概要
- 論文の詳細を見る
Ce liquid metal ion sources using Ce-Cu alloy metal for maskless ion implantation into optical devices have been developed. The emission characteristics, such as voltage vs current characteristics, beam angular current intensity and mass spectra have been measured. Maskless ion implantation into fused quartz using a 200 keV Ce focused ion beam, and the depth profile of implanted Ce are described.
- 社団法人応用物理学会の論文
- 1988-06-20
著者
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Aoyagi Y
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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Aoyagi Y
Inst. Physics And Chemical Res. (riken) Wako Jpn
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Namba S
Japan Atomic Energy Res. Inst. Kyoto Jpn
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Namba Susumu
Nagasaki Institute Of Applied Science
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Namba Susumu
Riken The Institute Of Physical And Chemical Research
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Aoyagi Yoshinobu
Riken
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SHIOKAWA Takao
RIKEN, The Institute of Physical and Chemical Research
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Sakamoto Toshitugu
Faculty Of Engineering Science Osaka University
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Kagami Manabu
Tokyo Research Laboratory Mitsubishi Rayon Co. Ltd.
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Shiokawa Takao
Semiconductor Laboratory Riken The Institute For Physical And Chemical Research
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OKADA Hiroshi
Tokyo University of Mercantile Marine
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Namba S
Riken The Institute Of Physical And Chemical Research
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SEGAWA Yuzaburo
Riken, The Institute of Physical and Chemical Research
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ITO Toshio
Tokyo Research Laboratory, Mitsubishi Rayon Co., Ltd.
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Segawa Yuzaburo
Riken The Institute Of Physical And Chemical Research
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Namba S
Faculty Of Engineering Osaka University
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Ito Toshio
Tokyo Research Laboratory Mitsubishi Rayon Co. Ltd.
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Okada Hiroshi
Tokyo Research Laboratory Mitsubishi Rayon Co. Ltd.
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