The Characteristics of Ion-Beam-Induced Spontaneous Etching of GaAs by Low-Energy Focused Ion Beam Irradiation

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-11-30

著者

• Namba S

  Inst. Physical And Chemical Research Wako

• Namba S

  Japan Atomic Energy Res. Inst. Kyoto Jpn

• Namba S

  Osaka Univ. Osaka

• GAMO Kenji

  Research Center for Extereme Materials, Osaka University

• NAMBA Susumu

  Research Center for Extereme Materials, Osaka University

• Nonoyama Shinji

  Quantum Material Research Laboratory Frontier Research Program The Institute Of Physical And Chemica

• Namba Susumu

  Research Center For Extreme Materials And Department Of Electrical Engineering Osaka University

• Namba Susumu

  Frontier Research Program Riken

• YAMASHIRO Tomoki

  Department of Electric Engineering, Faculty of Engineering Science, Osaka University

• AIHARA Ryuzo

  Eiko Engineering Co.Ltd.

• KOSUGI Toshihiko

  Department of Electrical Engineering, Faculty of Engineering Science, Osaka University

• AIHARA Ryuzo

  Eico Engineering Co. Lid.

• Kosugi Toshihiko

  Department Of Electric Engineering Faculty Of Engineering Science Osaka University

• Yamamoto Tokujirou

  Department Of Materials Science And Engineering Kyoto University

• KOSUGI Toshihiko

  NTT Wireless System Laboratories

• Namba S

  Riken The Institute Of Physical And Chemical Research

• Namba S

  Faculty Of Engineering Osaka University

• Yamamoto Takayoshi

  The Institute Of Scientific And Industrial Research Osaka University

• Yamashiro Tomoki

  Department Of Electrical Engineering Faculty Of Engineering Science Osaka University

• NAMBA Susumu

  Research Center for Extreme Materials and Department of Electrical Engineering, Osaka University

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