Fabrication of Ballistic Quantum Wires and Their Transport Properties
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概要
- 論文の詳細を見る
Quantum wires with width less than the elastic mean free path and comparable to the Fermi wavelength are fabricated using high resolution electron beam lithography and ion beam etching. The low temperature magnetotransport properties of the quasi-ballistic channels reveal novel phenomena resulting from the ballistic motion of electrons. We propose new side-gate transistors. The two dimensional electron gas remaining at both sides of the channel is utilized to narrow the conduction width. This technique may open the way to control electrostatically an Aharonov-Bohm phase shift in the GaAs–AlGaAs loop.
- 1989-10-20
著者
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TAKAGAKI Yukihiko
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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GAMO Kenji
Research Center for Extereme Materials, Osaka University
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NAMBA Susumu
Research Center for Extereme Materials, Osaka University
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Murase Kazuo
Department Of Applied Chemistry Faculty Of Science And Engineering Chuo University
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Takaoka Sadao
Department Of Geography Faculty Of Science Tokyo Metropolitan University
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Wakaya Fujio
Department Of Electronics And Materials Physics School Of Engineering Science Osaka University
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Gamo Kenji
Research Center for Extreme Materials and Department of Electrical Engineering, Osaka University, Toyonaka, Osaka 560
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Takaoka Sadao
Department of Physics, Osaka University, Toyonaka, Osaka 560
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Murase Kazuo
Department of Physics, Osaka University, Toyonaka, Osaka 560
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Takagaki Yukihiko
Department of Electrical Engineering, Osaka University, Toyonaka, Osaka 560
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Namba Susumu
Research Center for Extreme Materials and Department of Electrical Engineering, Osaka University, Toyonaka, Osaka 560
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Wakaya Fujio
Department of Electrical Engineering, Osaka University, Toyonaka, Osaka 560
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