Studies of Far-Infrared Properties of Thin Bismuth Films on BaF_2 Substrate
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概要
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The plasma frequencies (a.) of epitaxially grown bismuth film on BaF. aredetermined from the far-infrared reflectivity as a function of film thickness (d).With decreasing d, co. increases at first and then decreases abruptly near d= 100 A.This is considered as a sign of semimetaJ-semiconductor transition caused by thequantum size effect. The temperature dependences of co, and its damping factorare also measured with various d. The cyclotron mass of the electron band increaseswith decreasing d. To explain these experimental results, the strain effects of thefilm due to the lattice mismatch between the film and the substrate have to betaken into account.
- 社団法人日本物理学会の論文
- 1985-06-15
著者
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TAKAOKA Sadao
Department of Physics,Faculty of Science,Osaka University
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MURASE Kazuo
Department of Physics,Faculty of Science,Osaka University
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Murase Kazuo
Department Of Applied Chemistry Faculty Of Science And Engineering Chuo University
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Takaoka Sadao
Department Of Geography Faculty Of Science Tokyo Metropolitan University
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