Band Edge Structure Transformation Due to Ferroelectric Transition in Pb_<1-x>Ge_xTe Alloy Semiconductors
スポンサーリンク
概要
- 論文の詳細を見る
The band edge structure modification of Pb. .Ge,Te due to the structuralphase transition has been investigated by means of the interband absorption andthe Shubnikov-do Haas (SdH) effect. Below the phase transition temperautre(7'.) the band gap determined by the optical absorption increases with loweringtemperatures or at least its temperature coefficient changes. From the SdH effectbelow T., we obtained the information of the carrier redistribution among theconduction (or valence) bands caused by the phase transition.These results can be explained only when we take into account the effects ofrelative sublattice displacement and the homogeneous strain at the same time.
- 社団法人日本物理学会の論文
- 1982-06-15
著者
-
TAKAOKA Sadao
Department of Physics,Faculty of Science,Osaka University
-
MURASE Kazuo
Department of Physics,Faculty of Science,Osaka University
-
Murase Kazuo
Department Of Applied Chemistry Faculty Of Science And Engineering Chuo University
-
Takaoka Sadao
Department Of Geography Faculty Of Science Tokyo Metropolitan University
-
Takaoka Sadao
Department Of Physics Osaka University
関連論文
- An Indication of Quantum Hall Effect in PbTe-Pb_Sn_xTe Superlattice
- Investigation of Hall Resistivity in Antidot Lattices with respect to Commensurability Oscillations
- On the Mechanism of Commensurability Oscillations in Anisotropic Antidot Lattices
- Current-Direction-Dependent Commensurate Oscillations in GaAs/AlGaAs Antidot Superlattice
- Anderson Localization and Universal Conductance Fluctuations with Spin-Orbit Interactions in δ-Doped GaAs Films and Wires
- Phase Coherence Length in Planar Doped Thin GaAs Wires Fabricated by Ion Beam Etching : Microfabrication and Physics
- Phase Coherence Length in Planar Doped Thin GaAs Wires Fabricated by Ion Beam Etching
- Landform effects on fire behavior and post-fire regeneration in the mixed forests of northern Japan
- Electron-Beam-Induced Oxidation for Single-Electron Devices
- Investigation of Photoresponse in Photoconducting Semiconductor-Superconductor Microstructure
- Transport Properties and Fabrication of Coupled Electron Waveguides
- Evaluation of Edge Channel Width by Frequency Dependence of Capacitance Minima in Quantum Hall Regime
- Magnetic Electron Focusing Effect in GaAs/AlGaAs Heterostructure with Gate-Controlled Byway Channel
- Magnetotransport in Hexagonal and Rectangular Antidot Lattices
- Investigation of In Situ Process for GaAs/AlGaAs Buried Quantum Wires
- Fabrication and Magnetotransport of One-Dimensional Lateral Surface Superlattice Fabricated by Low-Energy Ion Irradiation
- Magnetotransport in One-Dimensional Lateral Surface Superlattice Fabricated by Low-Energy Argon Ion Irradiation
- Estimation of Damage Induced by Focused Ga Ion Beam Irradiation
- Transport Properties of Coupled Electron Waveguides Buried irn Heterostructure
- Single Particle Relaxation Times from Shubnikov-de Haas Oscillations in Antidot Structures
- The effect of missing rings on stand-age estimation of even-aged forests in northern Hokkaido, Japan
- Simulation of Gas and Particle Behaviors in Moving-Fluidized Bed with Inclined Baffle Plates by Two-Fluid Model
- Observation of Local Modes in Pb_Sn_xTe Doped with Group III Elements (In and Ga)
- A preliminary study on the effects of pyroclastic fall deposit on the forest ecosystem in southwestern hokkaido, japan
- Investigation of Transport Properies in Pb_Sn_xTe Doped with Indium
- A PRELIMINARY REPORT ON PHENOLOGICAL MONITORING USING EXPERIMENTAL CHAMBERS IN MT. KISOKOMAGATAKE, CENTRAL JAPAN (18th Symposium on Polar Biology)
- Band Edge Structure Transformation Due to Ferroelectric Transition in Pb_Ge_xTe Alloy Semiconductors
- Stability of Subalpine Forest-Meadow Boundary Inferred from Size and Age Structure of Abies mariesii Thickets on a Japanese Snowy Mountain
- Studies of Far-Infrared Properties of Thin Bismuth Films on BaF_2 Substrate
- Composition Modulation in Quantum Wire Structures on Vicinal (110) GaAs Studied by Photoluminescence
- Spectral and Spatial Behavior of Raman Scattering and Photoluminescence from Porous Silicon
- Electron Scattering by Thermal Acceptors in Germanium
- Cyclotron Resonance of Thermally Quenched Germanium
- Estimation on the Strength of a Liquid Bridge Adhered to Three Spheres
- Cyclotron Resonance of Germanium-Silicon Alloys
- Cyclotron Resonance of Tin-Doped Germanium
- Quantum Transport Study of Silicon and Germanium by 4-mm Wave Cyclotron Resonance below 1°K
- Impurity-Assisted Intervalley Electron Scattering in Boron-Doped Silicon
- Cyclotron Resonance of Doped Silicon
- Size Dependence of Universal Conductance Fluctuations in Narrow N^+ -GaAs Wires : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Localization, Mesoscopic Systems
- Ballistic Electron Transmission in GaAs-AlGaAs Crossed Wire Junctions
- Seebeck Effects and Electronic Thermal Conductivity of IV-VI Materials
- Transport Properties in Hexagonal Arrays of Antidots with Different Carrier Densities
- Ballistic Electron Transport on Periodic and Quasi-Periodic Triangular Lattices of Scatterers : Micro/nanofabrication and Devices
- Ballistic Electron Transport on Periodic and Quasi-Periodic Triangular Lattices of Scatterers
- Electron Focusing in a Widely Tapered Cross Junction
- Structural Changes at Glass-Transition in Ge_xSe_ Studied by Raman Scattering
- Life Times of F' Centers in KCl at Room Temperaure.
- Confinement Potential in an Asymmetrically Biased Quantum Point Contact
- Fabrication of Ballistic Quantum Wires and Their Transport Properties : Microfabrication and Physics
- Fabrication of Ballistic Quantum Wires and Their Transport Properties
- Bonds and Bands of Pb1-xSnxTe--Carrier Density and x Dependence of Lattice Dielectric Constant (Selected Topics in Semiconductor Physics) -- (Phase Transition)
- Study of the Dispersion Relations of the Coupled Phonon-Damped Plasmon Mode in n-GaAs by Light Scattering (Selected Topics in Semiconductor Physics) -- (Light Scattering)
- Interaction of the TO-phonon with the Acoustic Phonons near the Phase Transition Temperature in Pb_Ge_xTe
- Pressure Dependence of the Lattice Vibration in the Orthorhombic and Rhombohedral Structures of Black Phosphrus
- Electron Spin Resonance of the M center in Potassium Chloride
- Raman Scattering by Coupled LO Phonon-Plasmon Mode in n-GaAs
- Electron Spin Resonance of the A center in KCl Crystals
- Determination of Deformation Potential Constants from the Electron Cyclotron Rresonance in Germanium and Silicon
- H_2O Laser Cyclotron Resonance of n-type Indium Antimonide
- Electron Scattering by Neutralized Acceptors in Germanium : I.Gallium and Indium
- Electron Scattering by Neutralized Acceptors in Germanium. : II. Zinc
- Impurity-Assisted Intervalley Electron Scattering of Germanium and Silicon under Uniaxial Compression
- Cyclotron Resonance in the Valence Band of Germanium under Uniaxial Stress
- Frequency-Dependent Linewidth of Classical Cyclotron Resonance in Germanium
- Electronic Transports for Thermoelectric Applications on IV-VI Semiconductors
- Cyclotrion Resonance Studies of Ge-Si And Ge-Sn Systems
- Dimensional Crossover of Electron-Electron Scattering in GaAs-AlGaAs Wires