Distribution Profiles and Annealing Characteristics of Defects in GaAs Induced by Low-Energy FIB Irradiation : Electrical Properties of Condensed Matter
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概要
- 論文の詳細を見る
- 1988-11-20
著者
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Namba S
Japan Atomic Energy Res. Inst. Kyoto Jpn
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Gamo Kenji
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Aihara Ryuso
JEOL LTD.
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Yuba Yoshihiko
Department Of Physical Science Graduate School Of Engineering Science Osaka University
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Nonoyama Shinji
Quantum Material Research Laboratory Frontier Research Program The Institute Of Physical And Chemica
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Yuba Yoshihiko
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Namba Susumu
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Miyake Hideo
Department Of Surgery Japanese Red Cross Nagoya First Hospital
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Namba S
Riken The Institute Of Physical And Chemical Research
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MIMURA Ryo
JEOL Ltd.
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Namba S
Faculty Of Engineering Osaka University
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Miyake Hideo
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Miyake Hideo
Department Of Electrical And Electronic Engineering Mie University
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