Depth Distribution of Defects in Mg-Ion and Cd-Ion Implanted GaAs
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1976-02-05
著者
-
AOKI Kazunori
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
-
Masuda Kohzoh
Material Science Tsukuba University
-
Aoki Kazunori
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
-
Aoki Kazunori
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kobe University
-
Gamo Kenji
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
-
Masuda Kohzoh
Department Of Electric Engineering Faculty Of Engineering Science Osaka University
-
Namba Susumu
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
-
Namba S
Riken The Institute Of Physical And Chemical Research
-
Namba S
Faculty Of Engineering Osaka University
関連論文
- Internal Q-Switching in n-Type GaAs Lasers under Electron Beam Excitation
- Abnormal Laser Emission from Electron Beam Excited GaAs
- Fabrication of Slot-Antenna Coupled Warm Carrier Detectors for Submillimeter Wave Radiation
- Thin-Film Slot Antennas for 2.5 THz Submillimeter Radiation
- Fabrication of Antenna-Coupled Microbolometers
- Investigation of Hall Resistivity in Antidot Lattices with respect to Commensurability Oscillations
- Current-Direction-Dependent Commensurate Oscillations in GaAs/AlGaAs Antidot Superlattice
- Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing ( Quantum Dot Structures)
- Selective Etching of Hydrogenated Amorphous Silicon by Hydrogen Plasma ( Plasma Processing)
- Phase Coherence Length in Planar Doped Thin GaAs Wires Fabricated by Ion Beam Etching : Microfabrication and Physics
- Phase Coherence Length in Planar Doped Thin GaAs Wires Fabricated by Ion Beam Etching
- Metastable Domain Structures of Ferromagnetic Microstructures Observed by Soft X-Ray Magnetic Circular Dichroism Microscopy
- Enhanced Diffusion and Lattice Location of Indium and Gallium Implanted in Silicon
- Novel Electron-Beam Molecular Resists with High Resolution and High Sensitivity for Nanometer Lithography
- Fabrication of Planar-Type Ferromagnet/Nonmagnet/Ferromagnet Structures Using Multiangle Deposition
- Study of Magnetostatic Interaction in Magnetic Multilayer Wires Using Exchange Anisotropy
- Effects of Stray Fields in Flat-End and Pointed-End NiFe/Cu/NiFe/NiO Wires : Magnetism
- Effects of Shape Anisotropy in CoO/Co/Cu/NiFe/Cu/Co Wires
- Galvanomagnetic Effect of Submicron Exchange-Coupled Co/Ni Wire
- Low Energy Focused Ion Beam System and Application to Low Damage Microprocess : Etching and Deposition Technology
- Low Energy Focused Ion Beam System and Application to Low Damage Microprocess
- Potential Modulation of Semiconductor Dot Array System due to Photoexcitation
- Electron-Beam-Induced Oxidation for Single-Electron Devices
- Investigation of Photoresponse in Photoconducting Semiconductor-Superconductor Microstructure
- Transport Properties and Fabrication of Coupled Electron Waveguides
- Magnetic Electron Focusing Effect in GaAs/AlGaAs Heterostructure with Gate-Controlled Byway Channel
- Magnetotransport in Hexagonal and Rectangular Antidot Lattices
- Investigation of In Situ Process for GaAs/AlGaAs Buried Quantum Wires
- Fabrication and Magnetotransport of One-Dimensional Lateral Surface Superlattice Fabricated by Low-Energy Ion Irradiation
- Magnetotransport in One-Dimensional Lateral Surface Superlattice Fabricated by Low-Energy Argon Ion Irradiation
- Estimation of Damage Induced by Focused Ga Ion Beam Irradiation
- Transport Properties of Coupled Electron Waveguides Buried irn Heterostructure
- Single Particle Relaxation Times from Shubnikov-de Haas Oscillations in Antidot Structures
- Fine-Tolerance Resonator Applications of Bismuth-Layer-Structured Ferroelectric Ceramics
- Temperature Dependence of Piezoelectric Properties of Grain-Oriented CaBi_4Ti_4O_ Ceramics
- Energy Trapping Characteristics of Bismuth Layer Structured Compound CaBi_4Ti_4O_
- Minute Viscoelastic Observation in Isotropic-Nematic Phase Transition of 7CB with a Thousandth Kelvin Resolution
- Liquid Phase Epitaxial Growth of (3GaAs)_x{(3ZnSe)_y(Ga_2Se_3)_}_ Alloy
- Temperature Characteristics of (Ba_Sr_x)_2NaNb_5O_ Ceramics
- LPE Growth of (3GaAs)_x{(3ZnSe)_y(Ga_2Se_3)_}_ Alloy
- White-Light-Emitting Organic Electroluminescent Device Using Lanthanide Complexes
- Blue Electroluminescent 1, 2, 4-Triazole Derivative
- Growth of GaAsP on GaP by Compositional Conversion
- liquid Phase Epitaxy of GaAs by Yo-yo Solute Feeding Method
- Dynamic Response of Surface-Stabilized Ferroelectric Liquid Crystals : Effect of Alignment Films
- Current Instability and Chaos Induced during Low-Temperature Avalanche Breakdown In n-GaAs under Longitudinal Magnetic Field
- Chaotic Behavior of a Driven Current Filament Observed in High-Purity n-GaAs at 4.2 K
- Fabrication of Superconducting Weak Links by Electron Beam Lithography and Ion Implantation
- Dry Etching of Nb and Fabrication of Nb Variable-Thickness-Bridges
- Time-Resolved Spatial Structures of Periodically-Driven Current Filament in n-GaAs : Condensed Matter: Electronic Properties, etc.
- Conversion from GaAs to GaAsP by Annealing a GaAs Layer on GaP in Ga-As-P Solutiom
- High-Frequency Shear Viscoelastic Study of Cyanobiphenyl Series in the Smectic A and Nematic Mesophases
- Distribution Profiles and Annealing Characteristics of Defects in GaAs Induced by Low-Energy FIB Irradiation : Electrical Properties of Condensed Matter
- Observation of a Large-Scale Sheetlike Current Filament in a Thin n-GaAs Layer
- Tunnel Gap Imaging Investigation of Voltage Dependence of Molecular Images Obtained by Scanning Tunneling Microscope
- High-Performance Current-Voltage Measurement System for Scanning Tunneling Spectroscopy of Deposited Molecules
- Turnnel Gap Imaging Study of Highly Oriented Pyrolytic Graphite Using Scanning Tunneling Microscope
- Shubnikov-de Haas Oscillations in a Narrow GaAs/AlGaAs Wire
- Aperiodic Conductance Fluctuations in a Narrow GaAs/AlGaAs Wire
- Magnetization Process in Narrow and Wide Cross-Shaped Wires of Co/Cu/NiFe Structures
- Photoconductivity of Copper Phthalocyanine Single Crystals
- Shallow Donor Clusters in InP
- Approximate Polarized-Orbital Calculations of Electron-Exciton Elastic Collision Cross Sections
- Photocurrent Noise Observed by Resonant Photoexcitation at 4.2 K in n-GaAs
- Current Noise due to Impact Ionization of Shallow Neutral Donor in n-GaAs
- Increase in T_c of Nb Films Implanted with N^+_2
- Ion-Implanted Arsenic Profiles in GaAs Encapsulated by SiO_2 and Si_3N_4
- Control of T_c for Niobium by N Ion Implantation
- Lattice-Site Locations of Tin and Antimony Implanted in Gallium Phosphide
- Depth Distribution of Defects in Mg-Ion and Cd-Ion Implanted GaAs
- Photoluminescence Study of Cd-Ion Implanted n-GaAs
- Photoluminescence and Electrical Measurements on Manganese Ion-Implanted GaAs
- Lattice Site Location of Cadmium and Tellurium Implanted in Gallium Arsenide
- Activation Energies of Formation and Diffusion of As Vacancy in GaAs Measured by Photoluminescence
- Comparison between Concentration Profiles of Arsenic Implanted in Silicon Measured by Means of Neutron Activation Analysis and Radioactive Ion Implantation
- Hall Effect Measurements of Zn Implanted GaAs
- Effects of Implantation Temperature on Lattice Location of Tellurium Implanted in Gallium Arsenide
- ESR Studies on Defects and Amorphous Phase in Silicon Produced by Ion Implantation
- Dose Dependence of Photoluminescence Degradation in Te Ion-Implanted GaAs
- Lattice Location of Sb Implanted in GaAs Single Crystals
- Diffusion of Defects in Low Temperature Ion Implanted GaAs
- Concentration Profiles of Room Temperature Ion Implanted Indium in Silicon
- Enhanced Diffusion of Ion Implanted Sb in Silicon
- Stimulated Emission from CdS Thin Films Excited by N_2 Laser
- Electroluminescence of Green Light Region in Doped Anthracene
- Size Dependence of Universal Conductance Fluctuations in Narrow N^+ -GaAs Wires : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Localization, Mesoscopic Systems
- Focused Ion Beam Process for Formation of a Metal/Insulator/Metal Double Tunnel Junction
- Exchange Interaction from Current and Voltage Probes in Galvanomagnetic Effect in Polycrystal Co Thin Film
- Characterization of Directly Deposited Silicon Films Using Low-Energy Focused Ion Beam
- Maskless Deposition of Au on GaAs by Low-Energy Focused Ion Beam
- Nucleation Process of a Filamentary Current during Impact Ionization Avalanche in n-GaAs
- Ballistic Electron Transmission in GaAs-AlGaAs Crossed Wire Junctions
- Transport Properties of a Resistively-Coupled Single-Electron Transistor
- Transport Properties of Resistively-Coupled Single-Electron Transistor
- Transport Properties in Hexagonal Arrays of Antidots with Different Carrier Densities
- Ballistic Electron Transport on Periodic and Quasi-Periodic Triangular Lattices of Scatterers : Micro/nanofabrication and Devices
- Ballistic Electron Transport on Periodic and Quasi-Periodic Triangular Lattices of Scatterers
- Electron Focusing in a Widely Tapered Cross Junction
- Chaotic Motions in the Electrical Avalanche Breakdown Caused by Weak Photoexcitation in n-GaAs
- Chaotic Behaviors of the Current Filaments in a Model of Firing Wave Instability