Shallow Donor Clusters in InP

概要

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Electronic states of a shallow donor in InP are investigated as functions of donor concentration (N_D-N_A) from 4.0×10^<15> to 5.5×10^<16>/cm^3 by electron spin resonance (ESR) at low temperatures. The Overhauser shift, nuclear spin-lattice relaxation time T_<1N>, and g-value are found to strongly depend on N_D-N_A; i.e., T_<1N> has a maximum at around 7×10^<15>/cm^3, while the g-value increases with increasing donor concentration, ranging from 1.2024 to 1.2143. Sweeping the magnetic field at appropriate speeds yields significantly inhomogeneous broadening of the ESR line, indicating that the ESR comes from bound donor electrons at least below N_D-N_A of 1.5×10^<16>/cm^3. A model of donor clusters is proposed to interpret the obtained results. The donor-concentration dependence of the g-values indicates that the donor states are significantly changed with the average donor-cluster size.
社団法人応用物理学会の論文
1994-08-15