Lattice-Site Locations of Tin and Antimony Implanted in Gallium Phosphide
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概要
- 論文の詳細を見る
The lattice locations of Sn and Sb atoms implanted in GaP single crystals have been studied as a function of implantation temperature by means of ion channeling and ion-induced X-rays. Angular scans through the major axes were performed to distinguish two types of substitutional sites in GaP. For the implantation at 400℃, about 80% of Sn atoms and 100% of Sb atoms were located on Ga- and P-substitutional sites, respectively. Sn and Sb atoms implanted at room temperature were found to be on off-lattice sites even after annealing at 700℃. An implantation annealing stage for lattice location and lattice disorder was observed in the temperature range from 200℃ to 250℃.
- 社団法人応用物理学会の論文
- 1977-09-05
著者
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MASUDA Kohzoh
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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NAMBA Susumu
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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Masuda Kohzoh
Material Science Tsukuba University
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TAKAI Mikio
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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GAMO Kenji
Department of Electrical Engineering,Faculty of Engineering Sciences,Osaka University
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Gamo Kenji
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Masuda Kohzoh
Department Of Electric Engineering Faculty Of Engineering Science Osaka University
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MIZOBUCHI Akira
Department of Physics, Faculty of Science, Osaka University
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Ishida Toshio
Department Of Ophthalmology Teikyo University School Of Medicine
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Ishida Toshio
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University:(present Addres
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Mizobuchi Akira
Department Of Nuclear Science Faculty Of Science Osaka University
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Namba Susumu
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Namba S
Riken The Institute Of Physical And Chemical Research
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Namba S
Faculty Of Engineering Osaka University
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Ishida Toshio
Department of Chemistry, Faculty of Science, Hiroshima University
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MIZOBUCHI Akira
Department of Mechanical Engineering, University of Tokushima
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