Maskless Deposition of Au on GaAs by Low-Energy Focused Ion Beam
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概要
- 論文の詳細を見る
Direct deposition of Au films on GaAs substrate was performed using low-energy focused ion beam (FIB) irradiation. Pure Au film was obtained and current-voltage (I-V) characteristics of the Au/GaAs contacts were measured. The degradation of I-V characteristics compared to those of Au/GaAs contacts formed by evaporated Au was observed even for deposition at an energy of 50 eV due to ion-irradiation-induced damage. The I-V characteristics were somewhat improved by annealing at 200℃ for 1 min. As an example of application, a Au gate was formed on a GaAs/AlGaAs heterostructure using low-energy FIB direct deposition, and current control capability was demonstrated.
- 社団法人応用物理学会の論文
- 1995-12-30
著者
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Murase K
Ntt Corp. Kanagawa Jpn
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GAMO Kenji
Department of Electrical Engineering,Faculty of Engineering Sciences,Osaka University
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YUBA Yoshihiko
Department of Electrical Engineering, Faculty of Engineering Sciense, Osaka University
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Junichi Yanagisawa
Department Of Physical Science Graduate School Of Engineering Science Osaka University:research Cent
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Gamo K
Osaka Univ. Osaka
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Gamo Kenji
Graduate School Of Engineering Science Osaka University
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Gamo Kenji
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Gamo Kenji
Department Of Physical Science Graduate School Of Engineering Science Osaka University:research Cent
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Yuba Yoshihiko
Department Of Physical Science Graduate School Of Engineering Science Osaka University
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YANAGISAWA Junichi
Department of Physical Science, Graduate School of Engineering Science, Osaka University
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Nakayama Hideki
Faculty Of Engineering Shizuoka University
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Yuba Yoshihiko
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Nakayama H
Fuji Xerox Co. Ltd. Ebina Jpn
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Yanagisawa Junichi
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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NAKAYAMA Hiromasa
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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KITO Kuniyoshi
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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MONDEN Kentaro
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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