Low Energy Focused Ion Beam System and Application to Low Damage Microprocess
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-10-20
著者
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Namba S
Inst. Physical And Chemical Research Wako
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NAMBA Susumu
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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Namba S
Japan Atomic Energy Res. Inst. Kyoto Jpn
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Namba Susumu
Nagasaki Institute Of Applied Science
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GAMO Kenji
Department of Electrical Engineering,Faculty of Engineering Sciences,Osaka University
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Gamo Kenji
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Namba Susumu
Research Center For Extreme Materials And Department Of Electrical Engineering Osaka University
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Namba Susumu
Frontier Research Program Riken
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AIHARA Ryuzo
Eiko Engineering Co.Ltd.
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KOSUGI Toshihiko
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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MIMURA Ryou
JEOL Ltd
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AIHARA Ryuzo
JEOL Ltd
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Kosugi Toshihiko
Department Of Electric Engineering Faculty Of Engineering Science Osaka University
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KOSUGI Toshihiko
NTT Wireless System Laboratories
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Mimura R
Jeol Ltd
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Namba Susumu
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Nagatomo S
Shizuoka Univ. Shizuoka Jpn
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Namba S
Riken The Institute Of Physical And Chemical Research
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NAMBA Susumu
Research Center for Extreme Materials and Department of Electrical Engineering, Osaka University
関連論文
- Characterization of GaAs and AlGaAs layers grown by laser atomic layer epitaxy
- Internal Q-Switching in n-Type GaAs Lasers under Electron Beam Excitation
- Abnormal Laser Emission from Electron Beam Excited GaAs
- Flash-Lamp-Pumped Tunable Ti:BeAl_2O_4 Laser
- Passive Mode Locking of a Flashlamp-Pumped Ti:Sapphire Laser
- Flash Lamp Pumped Tunable Forsterite Laser
- Optical Properties and Lasing of Ti^ Doped BeAl_2O_4
- Laser Surface Cleaning in Air: Mechanisms and Applications
- Effects of Heat Treatment on the Sensitivity of Warm Carrier Devices for CH_3OH Laser Radiation
- Thin-Film Long-Wire Antenna for 10.6 μm CO_2 Laser Radiation
- Low-Energy Ion-Beam Irradiation Effects on Two-Dimensional Electron Gas in Modulation-Doped AlGaAs/ GaAs Heterostructure : Micro/nanofabrication and Devices
- Low-Energy Ion-Beam Irradiation Effects on Two-Dimensional Electron Gas in Modulation-Doped AlGaAs/GaAs Heterostructure
- Anderson Localization and Universal Conductance Fluctuations with Spin-Orbit Interactions in δ-Doped GaAs Films and Wires
- Phase Coherence Length in Planar Doped Thin GaAs Wires Fabricated by Ion Beam Etching : Microfabrication and Physics
- Phase Coherence Length in Planar Doped Thin GaAs Wires Fabricated by Ion Beam Etching
- Magnetic Analysis of Quadrupole Lens for MeV Ion Microprobe
- Three-Dimensional Analysis of Locally Implanted Atoms by MeV Helium Ion Microprobe
- Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite : Beam-Induced Physics and Chemistry
- Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams : Beam-Induced Physics and Chemistry
- Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams
- Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite
- Tomography of Microstructures by Scanning Micro-RBS Probe
- Optimization in Spot Sizes of Focused MeV Ion Beam by Precise Adjustment of Lens-Current Excitations : Nuclear Science, Plasmas and Electric Discharges
- Fabrication of Periodic Structures in GaAs by Focused-Ion-Beam Implantation : Microfabrication and Physics
- Fabrication of Periodic Structures in GaAs by Focused-Ion-Beam Implantation
- 40 nm Width Structure of GaAs Fabricated by Fine Focused Ion Beam Lithography and Chlorine Reactive Ion Etching : Techniques, Instrumentations and Measurement
- FIB Exposure Characteristics of LB Film
- Ridge Type Microfabrication by Maskless Ion Implantation of Si into SiO_2 Film
- Laser-Induced Etching of Mn-Zn ferrite and Its Application : Etching and Deposition Technology
- Enhanced Diffusion and Lattice Location of Indium and Gallium Implanted in Silicon
- Microfabricated Submicron Al-Filament Biprism as Applied to Electron Holography : Micro/nanofabrication and Devices
- Microfabricated Submicron Al-Filament Biprism as Applied to Electron Holography
- The Characteristics of Ion-Beam-Induced Spontaneous Etching of GaAs by Low-Energy Focused Ion Beam Irradiation : Focused Ion Beam Process
- The Characteristics of Ion-Beam-Induced Spontaneous Etching of GaAs by Low-Energy Focused Ion Beam Irradiation
- Low Energy Focused Ion Beam System and Application to Low Damage Microprocess : Etching and Deposition Technology
- Low Energy Focused Ion Beam System and Application to Low Damage Microprocess
- Ion Beam Assisted Deposition of Tungsten on GaAs
- Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam excited Plasma(EBEP) System : Etching and Deposition Technology
- Magnetotransport in One-Dimensional Lateral Surface Superlattice Fabricated by Low-Energy Argon Ion Irradiation
- Single Particle Relaxation Times from Shubnikov-de Haas Oscillations in Antidot Structures
- Maskless Etching of AN Using Focused Ion Beam
- Maskless Ion Beam Assisted Etching of Si Using Chlorine Gas
- Influence of Beam Current Ripple on Secondary Electron and RBS Mapping Images
- New High Current Low Energy Ion Source
- B, As and Si Field Ion Sources
- Field Ion Sources Using Eutectic Alloys
- Fabrication of Niobium Weak Links by Means of Electron Beam Lithography and Ion Implantation : C-1: JOSEPHSON DEVICES
- Fabrication of Superconducting Weak Links by Electron Beam Lithography and Ion Implantation
- Dry Etching of Nb and Fabrication of Nb Variable-Thickness-Bridges
- Nonlinear Vibration of Liquid Droplet by Surface Acoustic Wave Excitation
- Distribution Profiles and Annealing Characteristics of Defects in GaAs Induced by Low-Energy FIB Irradiation : Electrical Properties of Condensed Matter
- Fabrication of Submicron Contact Hole with a Focused Ion Beam
- Self-Developing Characteristics of Nitrocellulose Exposed to Ion Beams
- CO_2 Laser Detection Using a Warm Carrier Device with a Thin Film Antenna
- Self-Development Mechanism of Nitrocellulose Resist : Electron Beam Irradiation
- Quick Focus Adjustment for Quadrupole Lens System to Form High-Energy Ion Microbeam
- Residual Local Strain in Gallium Arsenide Induced by Laser Pyrolytic Etchingin CCl_4 Atmosphere
- Local Temperature Rise during Laser Induced Etching of Gallium Arsenide in SiCl_4 Atmosphere
- Maskless Dry Etching of Gallium Arsenide with a Submicron Line-Width by Laser Pyrolysis in CCl_4 Gas Atmosphere
- Shubnikov-de Haas Oscillations in a Narrow GaAs/AlGaAs Wire
- Aperiodic Conductance Fluctuations in a Narrow GaAs/AlGaAs Wire
- Electrical and Magnetic Properties of Phthalocyanine Iodine Charge Transfer Complex
- Electrical Conduction in Phthalocyanine Single Crystals
- Optical Waveguiding and Electrooptic Modulation in Ion-Implanted CdTe
- A Loss Mechanism in Optical Waveguides Fabricated by Ion Implantation in Fused Quartz
- Optical Waveguides Fabricated by B Ion Implanted into Fused Quartz
- A Large Time Delay of the Stimulated Emission in CdS Laser Pumped by an Electron Beam
- Increase in T_c of Nb Films Implanted with N^+_2
- Ion-Implanted Arsenic Profiles in GaAs Encapsulated by SiO_2 and Si_3N_4
- Control of T_c for Niobium by N Ion Implantation
- Lattice-Site Locations of Tin and Antimony Implanted in Gallium Phosphide
- Comparison between Concentration Profiles of Arsenic Implanted in Silicon Measured by Means of Neutron Activation Analysis and Radioactive Ion Implantation
- ESR Studies on Defects and Amorphous Phase in Silicon Produced by Ion Implantation
- Concentration Profiles of Room Temperature Ion Implanted Indium in Silicon
- Low Temperature Magnetoresistance of a Quasi-Ballistic Narrow Wire Confined by Split Metal Gates
- Size Dependence of Universal Conductance Fluctuations in Narrow N^+ -GaAs Wires : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Localization, Mesoscopic Systems
- A Transverse Electron Beam Source for the Excitation of CW Lasers
- Ballistic Electron Transmission in GaAs-AlGaAs Crossed Wire Junctions
- Electrical Properties of Laser-Annealed Glow-Discharge Amorphous Silicon Layers
- Quantum Transport in PtSi Thin Films and Narrow Wires
- Transport Properties in Hexagonal Arrays of Antidots with Different Carrier Densities
- Numerical Study of the Charge Distribution in a Quantum Wire Consisting a Junction of Wide-Narrow Geometry
- Ab Initio Cluster Study of the Interaction of Hydrogen with the GaAs(100) Surface
- Ballistic Electron Transport on Periodic and Quasi-Periodic Triangular Lattices of Scatterers : Micro/nanofabrication and Devices
- Ballistic Electron Transport on Periodic and Quasi-Periodic Triangular Lattices of Scatterers
- Electron Focusing in a Widely Tapered Cross Junction
- Self-Development Properties of Nitrocellulose for Focused Ion Beam Lithography : Techniques, Instrumentations and Measurement
- Maskless Ion Implantation of Cerium by Focused Ion Beam : Techniques, Instrumentations and Measurement
- Contrast of the X-Ray Mask for Synchrotron Radiation and the Characteristics of Replicated Pattern
- Fabrication of Ballistic Quantum Wires and Their Transport Properties : Microfabrication and Physics
- A Blazed Si Grating for Soft X-Ray Fabricated by Two-Stage Reactive Ion-Beam Etching
- Graphoepitaxy of Ge Films on SiO_2 by Zone Melting Recrystallization
- Fabrication of 80 nm-Wide Lines in FPM Resist by H^+ Beam Exposure
- Fabrication of Si0_2 Grating Patterns with Vertical Sidewalls by S0R X-Ray Lithography and Reactive Ion-Beam Etching
- Etched Profile of Si by Ion-Bombardment-Enhanced Etching
- Stoichiometric Change in Gallium Arsenide after Laser-Induced Thermochemical Etching
- Microanalysis by Focused MeV Helium Ion Beam
- 8 nm Wide Line Fabrication in PMMA on Si Wafers by Electron Beam Exposure
- A Stable High-Brightness Electron Gun with Zr/W-tip for Nanometer Lithography. : I. Emission Properties in Schottky- and Thermal Field-Emission Regions
- Ion Beam Assisted Deposition of Metal Organic Films Using Focused Ion Beams