Graphoepitaxy of Ge Films on SiO_2 by Zone Melting Recrystallization
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概要
- 論文の詳細を見る
Graphoepitaxy of vacuum-evaporated Ge films on amorphous fused quartz or thermally grown SiO_2 substrates with surface-relief gratings engraved by reactive ion etching has been performed by a heating process of zone melting. We observed that zone melted films on gratings consisted of grains of 2-10 μm size with <100> direction parallel to the grating axis and perpendicular to the substrate plane.
- 社団法人応用物理学会の論文
- 1982-10-20
著者
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Namba Susumu
Faculty Of Engineering Science Osaka University
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Aritome H
Research Center For Extreme Materials Faculty Of Engineering Science Osaka University
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Aritome Hiroaki
Faculty Of Engineering Osaka University
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Moriwaki Kazuyuki
Faculty Of Engineering Science Osaka University:(present Address) Electrical Communication Laborator
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SAKANO Kiyoji
Faculty of Engineering Science, Osaka University
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Moriwaki K
Ntt Applied Electronics Laboratories
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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Sakano Kiyoji
Faculty Of Engineering Science Osaka University:(present Address) Sharp Corporation Integrated Circu
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