Exciton Absorption in GaSe under Intense Excitation
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概要
- 論文の詳細を見る
High excitation absorption was investigated irt GaSe at 2 K and 77 K, using aN. laser. Change in absorption coefficient was measured directly by a pulse-modulation techrxique. A structure was found at an exeitonie transition around2.1 eV. The structure shows j">eak shift and broadening of Clll exciton absorptionline. Shift and broadening are due to an elastic collision [>etween two excitons.Two kinds of induced absorption were also observed. One is possibly ascribed toexciton excitation associated with collision with 'the second exciton and the otherto excitation of a trapped electron to a eonductic>n band.
- 社団法人日本物理学会の論文
- 1977-07-15
著者
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Namba Susumu
Faculty Of Engineering Science Osaka University
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Masuda Kohzoh
Faculty Of Engineering Science Osaka University
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Masuda Kohzoh
Faculty Of Engineering Science Osaka University:tsukuba University
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Ugumori Tadaki
Faculty Of Engineering Science Osaka University:technical College Yamaguchi University
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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