Electrical Evaluation of Defects Induced in Silicon by High Energy Boron Ion Implantation
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概要
- 論文の詳細を見る
The suitable dose and annealing temperature for high energy ion implantation to form a retrograde well or a buried conductive layer for CMOS devices were investigated by studying I-V and C-V characteristics. Boron ions were implanted in Si at 400 and 700 keV with doses ranging from 1×10^<13> cm^<-2> to 3×10^<14>cm^<-2>. It was found that the leakage currents induced by high energy boron implantation at 400 and 700 keV with a dose of less than 3 ×10^<13>cm^<-2> could be suppressed at an unimplanted level by annealing at 950℃ for 20 minutes.
- 社団法人応用物理学会の論文
- 1989-10-20
著者
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Sayama Hirokazu
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Akasaka Youichi
Faculty Of Engineering Science Osaka University
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Takai Mikio
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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TAKAI Mikio
Faculty of Engineering Science and Research Center for Extreme Materials,Osaka University
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TSUKAMOTO Katsuhiro
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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AKASAKA Youichi
Faculty of Engineering Science and Research Center for Extreme Materials,Osaka University:LSI Research and Development Laboratory Mitsubishi Electric Corporation
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NAMBA Susumu
Faculty of Engineering Science and Research Center for Extreme Materials,Osaka University
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