Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam Excited Plasma (EBEP) System
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概要
- 論文の詳細を見る
Ion beam etching (IBE) of GaAs with a source gas of Cl2 or Ar was carried out at a low energy ranging from 5 to 130 eV by using an electron-beam-excited-plasma system, and residual defect centers were investigated by means of deep-level transient spectroscopy (DLTS). Foul kinds of defect centers labeled L1 L2, L3, L5 with activation energies of 0.31, 0.45, 0.58, 0.48 eV, respectively, were resolved. Three of them were associated with damages induced by IBE and it was found that they have different thresholds for their generation, i.e., 60, 40 and 20 eV for L1, L2 and L3, respectively. It is necessary to reduce ion energy to less than 20 eV for perfect damage-free IBE of GaAs.
- 1989-11-20
著者
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Masui Norio
Faculty Of Engineering Science Osaka University
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Aoyagi Yoshinobu
Riken
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Gamo Kenji
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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HARA Tamio
RIKEN, The Institute of Physical and Chemical Research
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Yuba Yoshihiko
Faculty Of Engineering Science Osaka University
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Hamagaki Manabu
Riken
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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Yu Jin-Zhong
Institute of Semiconductors, Chinese Academy of Sciences, P.O.BOX 912, Beijing, China
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Gamo Kenji
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, 560, Japan
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Hamagaki Manabu
RIKEN, The Institute of Physical and Chemical Research, Wako, Saitama, 351-01, Japan
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Yuba Yoshihiko
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, 560, Japan
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