Fabrication of a Grating Pattern with Submicrometer Dimension in Silicon Crystal by Ion-Bombardment-Enhanced Etching
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概要
- 論文の詳細を見る
Ion-bombardment-enhanced etching (IBEE) as a means for fabrication of submicron pattern is described. Electron beam lithography and lift-off technique are used to form a Cr mask pattern for ion-bombardment. The etched depth can be controlled from 83 to 128 nm by varying the ion dose with an accuracy of 10 nm. A grating pattern with a period of 0.6 μm is fabricated in a Si substrate by IBEE technique by using Ar^+ ion. At an Ar^+ ton energy of 60 keV, the amount of side etching is observed to be 40 nm for a 0.21 -μm deep etched sample. This result shows the high resolution of IBEE.
- 社団法人応用物理学会の論文
- 1980-03-05
著者
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Namba Susumu
Faculty Of Engineering Science Osaka University
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Masuda Noboru
Faculty Of Engineering Science Osaka University
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Aritome H
Research Center For Extreme Materials Faculty Of Engineering Science Osaka University
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Aritome Hiroaki
Faculty Of Engineering Osaka University
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Moriwaki Kazuyuki
Faculty Of Engineering Science Osaka University:(present Address) Electrical Communication Laborator
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Moriwaki K
Ntt Applied Electronics Laboratories
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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