Microfabrication of LiNbO_3 by Reactive Ion-Beam Etching
スポンサーリンク
概要
- 論文の詳細を見る
The ratio of the etching rate of LiNbO_3 to AZ1350 at normal incidence for CHF_3 ion is about 5 times as large as that for Ar ion. This high ratio is utilized to fabricate LiNbO_3 blazed gratings and also LiNbO_3 guided wave optical elements such as grating couplers to demonstrate that reactive ion-beam etching is a very useful microfabrication technique for LiNbO_3.
- 社団法人応用物理学会の論文
- 1980-08-05
著者
-
Namba Susumu
Faculty Of Engineering Science Osaka University
-
Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
-
Matsui Shinji
Nippon Electric Co. Ltd
-
Aritome H
Research Center For Extreme Materials Faculty Of Engineering Science Osaka University
-
Aritome Hiroaki
Faculty Of Engineering Osaka University
-
MATSUI Shinji
Faculty of Engineering Science, Osaka University
-
YAMATO Toshiya
Matsushita Electronics Corporation
-
YAMATO Toshiya
Faculty of Engineering Science, Osaka University
-
Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
関連論文
- Characterization of GaAs and AlGaAs layers grown by laser atomic layer epitaxy
- Flash-Lamp-Pumped Tunable Ti:BeAl_2O_4 Laser
- Passive Mode Locking of a Flashlamp-Pumped Ti:Sapphire Laser
- Flash Lamp Pumped Tunable Forsterite Laser
- Optical Properties and Lasing of Ti^ Doped BeAl_2O_4
- Effects of Heat Treatment on the Sensitivity of Warm Carrier Devices for CH_3OH Laser Radiation
- Thin-Film Long-Wire Antenna for 10.6 μm CO_2 Laser Radiation
- Ion Beam Etching of InP. II. Reactive Etching with Halogen-Based Source Gases
- Ion Beam Etching of InP. I. Ar Ion Beam Etching and Fabrication of Grating for Integrated Optics
- Low-Energy Ion-Beam Irradiation Effects on Two-Dimensional Electron Gas in Modulation-Doped AlGaAs/ GaAs Heterostructure : Micro/nanofabrication and Devices
- Low-Energy Ion-Beam Irradiation Effects on Two-Dimensional Electron Gas in Modulation-Doped AlGaAs/GaAs Heterostructure
- Magnetic Analysis of Quadrupole Lens for MeV Ion Microprobe
- Three-Dimensional Analysis of Locally Implanted Atoms by MeV Helium Ion Microprobe
- Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite : Beam-Induced Physics and Chemistry
- Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams : Beam-Induced Physics and Chemistry
- Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams
- Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite
- Tomography of Microstructures by Scanning Micro-RBS Probe
- Optimization in Spot Sizes of Focused MeV Ion Beam by Precise Adjustment of Lens-Current Excitations : Nuclear Science, Plasmas and Electric Discharges
- Laser-Induced Etching of Mn-Zn ferrite and Its Application : Etching and Deposition Technology
- Microfabricated Submicron Al-Filament Biprism as Applied to Electron Holography : Micro/nanofabrication and Devices
- Microfabricated Submicron Al-Filament Biprism as Applied to Electron Holography
- Low Energy Focused Ion Beam System and Application to Low Damage Microprocess
- Ion Beam Assisted Deposition of Tungsten on GaAs
- Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam excited Plasma(EBEP) System : Etching and Deposition Technology
- Ion Beam Assisted Maskless Etching of GaAs by 50 keV Focused Ion Beam
- Maskless Etching of AN Using Focused Ion Beam
- Maskless Ion Beam Assisted Etching of Si Using Chlorine Gas
- Zone-Plate X-Ray Microscope Using a Laser Plasma Source
- Exciton Absorption in GaSe under Intense Excitation
- Luminescence due to Exciton-Electron and Exciton-Exciton Collisions in GaSe
- Influence of Beam Current Ripple on Secondary Electron and RBS Mapping Images
- Nanometer Pattern Delineation by Electron and Ion Beam Lithography
- B, As and Si Field Ion Sources
- Field Ion Sources Using Eutectic Alloys
- Fabrication of Niobium Weak Links by Means of Electron Beam Lithography and Ion Implantation : C-1: JOSEPHSON DEVICES
- Fabrication and DC Characteristics of Nb Vertical Type Microbridges
- An Assessment of e-Beam Controlled Discharge Pumping in KrF and XeCl Lasers
- Fabrication of Submicron Contact Hole with a Focused Ion Beam
- Self-Developing Characteristics of Nitrocellulose Exposed to Ion Beams
- CO_2 Laser Detection Using a Warm Carrier Device with a Thin Film Antenna
- Self-Development Mechanism of Nitrocellulose Resist : Electron Beam Irradiation
- Damage during Microchanneling Analysis Using 400 keV Helium Ion Microprobe
- Quick Focus Adjustment for Quadrupole Lens System to Form High-Energy Ion Microbeam
- Residual Local Strain in Gallium Arsenide Induced by Laser Pyrolytic Etchingin CCl_4 Atmosphere
- Local Temperature Rise during Laser Induced Etching of Gallium Arsenide in SiCl_4 Atmosphere
- Maskless Dry Etching of Gallium Arsenide with a Submicron Line-Width by Laser Pyrolysis in CCl_4 Gas Atmosphere
- Laser Induced Local Etching of Gallium Arsenide in Gas Atmosphere
- Fabrication of CdTe Optical Waveguide by LPE Using the Boat-Slide Technique
- Optical Waveguiding and Electrooptic Modulation in Ion-Implanted CdTe
- A Loss Mechanism in Optical Waveguides Fabricated by Ion Implantation in Fused Quartz
- Optical Waveguides Fabricated by B Ion Implanted into Fused Quartz
- Internal Q-Switching in a CdS Laser Pumped by an Electron Beam
- A Large Time Delay of the Stimulated Emission in CdS Laser Pumped by an Electron Beam
- Increase in T_c of Nb Films Implanted with N^+_2
- Ion-Implanted Arsenic Profiles in GaAs Encapsulated by SiO_2 and Si_3N_4
- Control of T_c for Niobium by N Ion Implantation
- Comparison between Concentration Profiles of Arsenic Implanted in Silicon Measured by Means of Neutron Activation Analysis and Radioactive Ion Implantation
- Paramagnetic Defects Induced in Naphthalene and Anthracene Single Crystals by Neutron Irradiation at Low Temperature
- Stimulated Emission from CdS Thin Films Excited by N_2 Laser
- Electroluminescence of Green Light Region in Doped Anthracene
- A Transverse Electron Beam Source for the Excitation of CW Lasers
- Residual Strain in Single Crystalline Germanium Islands on Insulator
- Thickness Dependence of SiO_2 Capping Layers on Recrystallization of Germanium Islands on Insulator
- Gallium Arsenide Layers Grown by Molecular Beam Epitaxy on Single Crystalline Germanium Islands on Insulator
- Single Crystalline Germanium Island on Insulator by Zone Melting Recrystallization
- Electrical Properties of Laser-Annealed Glow-Discharge Amorphous Silicon Layers
- Quantum Transport in PtSi Thin Films and Narrow Wires
- Self-Development Properties of Nitrocellulose for Focused Ion Beam Lithography : Techniques, Instrumentations and Measurement
- Contrast of the X-Ray Mask for Synchrotron Radiation and the Characteristics of Replicated Pattern
- A Blazed Si Grating for Soft X-Ray Fabricated by Two-Stage Reactive Ion-Beam Etching
- Graphoepitaxy of Ge Films on SiO_2 by Zone Melting Recrystallization
- Fabrication of 80 nm-Wide Lines in FPM Resist by H^+ Beam Exposure
- Fabrication of Si0_2 Grating Patterns with Vertical Sidewalls by S0R X-Ray Lithography and Reactive Ion-Beam Etching
- Etched Profile of Si by Ion-Bombardment-Enhanced Etching
- Reactive Ion-Beam Etching of Silicon Carbide
- Microfabrication of LiNbO_3 by Reactive Ion-Beam Etching
- Fabrication of SiO_2 Blazed Holographic Gratings by Reactive Ion-Etching
- Fabrication of a Grating Pattern with Submicrometer Dimension in Silicon Crystal by Ion-Bombardment-Enhanced Etching
- Stoichiometric Change in Gallium Arsenide after Laser-Induced Thermochemical Etching
- Microanalysis by Focused MeV Helium Ion Beam
- 8 nm Wide Line Fabrication in PMMA on Si Wafers by Electron Beam Exposure
- A Stable High-Brightness Electron Gun with Zr/W-tip for Nanometer Lithography. : I. Emission Properties in Schottky- and Thermal Field-Emission Regions
- Ion Beam Assisted Deposition of Metal Organic Films Using Focused Ion Beams
- Direct Writing of Gratings by Electron Beam in Poly(metyl methacrylate) Optical Waveguides
- Current Oscillation in Germanium Slice in a Transverse Magnetic Field
- Change in Scanning Tunneling Microscope (STM) Tip Shape during Nanofabrication
- Focused Ion Beam Technology : Beam Induced Physics and Chemistry
- Focusing Characteristics of X-Ray Zone Plates Fabricated by Electron Beam Lithography and Reactive Ion Etching
- Maskless Submicrometer Pattern Formation of Cr Films by Focused Sb Ion Implantation
- Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam Excited Plasma (EBEP) System
- Characteristics of Ion Beam Assisted Etching of GaAs Using Focused Ion Beam: Dependence on Gas Pressure
- Pulse Laser Annealing Effects in Si-Implanted GaAs
- The Enhanced and Suppressed Electroless Plating of Copper by UV-Irradiation : Chemistry (incl. physical process)
- Electrical Evaluation of Defects Induced in Silicon by High Energy Boron Ion Implantation
- Laser-Induced Etching of Mn–Zn Ferrite and Its Application
- Self-Development Properties of Nitrocellulose (Dependence on Ion Energies)
- Self-Development Properties of Nitrocellulose (Dependence on Ion Species)
- Characteristics of Be–Si–Au Ternary Alloy Liquid Metal Ion Sources