Electrical Properties of Laser-Annealed Glow-Discharge Amorphous Silicon Layers
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概要
- 論文の詳細を見る
The electrical properties of laser-annealed glow-discharge amorphous silicon (GD a-Si) layers have been studied. The principal results obtained are as follows : (1) electrical measurements show that the resistivity of the GD a-Si layer is decreased by four to five orders of magnitude by the laser annealing ; (2) Rutherford back-scattering measurements show that the hydrogen content in the GD a-Si layer deposited at room temperature is about 35 atomic percent, and this H_2 is not effused from the sample by the laser annealing when the power is near the threshold energy density ; (3) reflection electron diffraction measurements show that the GD a-Si layer is transformed into a polycrystalline silicon layer by laser annealing.
- 社団法人応用物理学会の論文
- 1980-05-05
著者
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OKAMOTO Hiroaki
Faculty of Engineering Science, Osaka University
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Namba Susumu
Faculty Of Engineering Science Osaka University
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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GAMO Kenji
Faculty of Engineering Science, Osaka University
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Gamo Kenji
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Okamoto Hiroaki
Faculty Of Engineering Science Osaka University
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Namba S
Faculty Of Engineering Science Osaka University
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Murakami Kouichi
Faculty Of Engineering Science Osaka University
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KOH Youn-Kyu
Faculty of Engineering Science, Osaka University
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HAMAKAWA Yohihiro
Faculty of Engineering Science, Osaka University
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Koh Youn-kyu
Faculty Of Engineering Science Osaka University:department Of Physics Yonsei University
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Namba S
Riken The Institute Of Physical And Chemical Research
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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Murakami Kouichi
Faculty Of Engineering Ehime University
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Namba S
Faculty Of Engineering Osaka University
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Hamakawa Yohihiro
Faculty Of Engineering Science Osaka University
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NAMBA Susumu
Research Center for Extreme Materials and Department of Electrical Engineering, Osaka University
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