Etched Profile of Si by Ion-Bombardment-Enhanced Etching
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概要
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The basic characteristics of the ion-bombardment-enhanced etching (IBEE) of Si are investigated, using 60 keV-Ar as the bombarding ion, with regard to its application to submicron lithography. The damaged layer to be etched is determined by calculating the deposited energy distribution in the substrate and by using the threshold deposited energy. The etched profile of Si under a pattern mask is calculated using the value of 4×10^<23> eV/cm^3 as the threshold. The calculated profile and the amount of side etching of Si are compared with the observed ones, and the agreement between them is found to be good, with an accuracy of 10 nm. The optimum dose for obtaining submicron patterns with sharp edges is found to be 0.8-2×10^<15> Ar^+/cm^2 at 60 keV. The etched patterns made by a focused ion beam with Gaussian profile are also calculated.
- 社団法人応用物理学会の論文
- 1981-07-05
著者
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Namba Susumu
Faculty Of Engineering Science Osaka University
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Aritome H
Research Center For Extreme Materials Faculty Of Engineering Science Osaka University
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Aritome Hiroaki
Faculty Of Engineering Osaka University
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Moriwaki Kazuyuki
Faculty Of Engineering Science Osaka University:(present Address) Electrical Communication Laborator
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Moriwaki K
Ntt Applied Electronics Laboratories
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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