Ion-Implanted Arsenic Profiles in GaAs Encapsulated by SiO_2 and Si_3N_4
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1978-10-05
著者
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Tamura Shigeharu
Government Industrial Research Institute
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Namba Susumu
Faculty Of Engineering Science Osaka University
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Masuda Kohzoh
Material Science Tsukuba University
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GAMO Kenji
Faculty of Engineering Science, Osaka University
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YOKOTA Katsuhiro
Faculty of Engineering, Kansai University
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Gamo Kenji
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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ISHIHARA Shinji
Research Reactor Institute, Kyoto University
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KIMURA Itsuro
Research Reactor Institute, Kyoto University
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Tamura S
Sony Corp. Yokohama Jpn
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Kimura Itsuro
Research Reactor Institute Kyoto University
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Tamura Susumu
Faculty Of Engineering Kansai University
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Ishihara Shinji
Research Reactor Institute Kyoto University
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Yokota Katsuhiro
Faculty Of Engineering Kansai University
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Namba S
Riken The Institute Of Physical And Chemical Research
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Ishihara Shinji
Research Teactor Institute Kyoto University
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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Namba S
Faculty Of Engineering Osaka University
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Yokota Katsuhiro
Faculty of Engineering and High-Technology Research Center, Kansai University, Suita, Osaka 564-8680, Japan
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