Multiple Photochemical Hole Burning in Tetraphenylporphine Derivatives Using a Focused Laser Beam : Future Technology
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-03-31
著者
-
Tamura Shigeharu
Government Industrial Research Institute
-
Tamura S
Sony Corp. Yokohama Jpn
-
Kishii N
Sony Corp. Yokohama Jpn
-
Asai N
Sony Corp. Yokohama Jpn
-
ASAI Nobutoshi
SONY Corporation Research Center
-
KISHII Noriyuki
SONY Corporation Research Center
-
TAMURA Shin-ichi
SONY Corporation Research Center
-
Seto J
Sony Corp. Res. Center Yokohama Jpn
関連論文
- Substrate Dependence of Laser-Induced Damage Threshold of Scandium Oxide High-Reflector Coatings for UV Pulsed Laser
- Influence of Deposition Parameters on Laser Damage Threshold of 355-nm Scandium Oxide-Magnesium Fluoride High-Reflector Coatings
- GaInAsP/InP Long Wavelength Quantum-Wire Lasers
- [Invited]GaInAsP/InP Long Wavelength Quantum-Wire Lasers
- GaInAsP/InP Strain-Compensated Quantum-Wire Lasers Fabricated by CH_4/H_2 Dry Etching and Organometallic Vapor-Phase-Epitaxial RegroWth : Optics and Quantum Electronics
- Distributed Reflector Laser with Wirelike Active Regions for Asymmetric Output Property (Short Note)
- Low Threshold Current Density Operation of GaInAsP/InP Lasers with Strain-Compensated Multiple-Layered Wirelike Active Regions
- GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH_4/H_2 Reactive-Ion Etching
- Low Threshold GaInAsP/InP Distributed Feedback Lasers with Periodic Wire Active Regions Fabricated by CH_4/H_2 Reactive Ion Etching
- Evaluation of Optical Gain Properties of GaInAsP/InP Compressively Strained Quantum-Wire Lasers
- GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH_4/H_2-Reactive-Ion-Etching
- Temperature Dependence of Internal Quantum Efficiency of 20-nm-Wide GaInAsP/InP Compressively-Strained Quantum-Wire Lasers
- Sidewall Recombination Velocity in GaInAsP/InP Quantum-Well Lasers with Wire-like Active Region Fabricated by Wet-Chemical Etching and Organo-Metallic Vapor-Phase-Epitaxial Regrowth
- Gain Spectrum Measurement of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers
- Estimation of Sidewall Nonradiative Recombination in GaInAsP/InP Wire Structures Fabricated by Low Energy Electron-Cyclotron-Resonance Reactive-Ion-Beam-Etching
- Nanofabrication with Langmuir-Blodgett Films of a Chemical Amplification Resist SAL601
- Formation of Fractionated Novolak Resin Langmuir-Blodgett Films
- Surface Damage in GaInAs/GaInAsP/InP Wire Structures Prepared by Substrate-Potential-Controlled Reactive Ion Beam Etching
- Fabrication of GaInAs/GaInAsP/InP Multi-Quantum-Wires and -Boxes by Substrate-Potential-Controlled Electron Cyclotron Resonance Reactive Ion Beam Etching
- Size Fluctuation of 50 nm Periodic GaInAsP/InP Wire Structure by Electron Beam Lithography and Wet Chemical Etching
- GaInAsP/InP Compressively Strained Quantum-Wire Lasers Fabricated by Electron Beam Lithography and 2-Step Organometallic Vapor Phase Epitaxy
- Multiple-Barrier Systems for Phonons: Transmission Characteristics
- Multiple Photochemical Hole Burning in Tetraphenylporphine Derivatives Using a Focused Laser Beam : Future Technology
- Multiple Photochemical Hole Burning in Tetraphenylporphine Derivatives Using a Focused Laser Beam
- 0.13 μm Pattern Delineation Using KrF Excimer Laser Light
- Proposal for the Coma Aberration Dependent Overlay Error Compensation Technology
- Ion-Implanted Arsenic Profiles in GaAs Encapsulated by SiO_2 and Si_3N_4
- Halogen and Mercury Lamp Annealing of Arsenic Implanted into Silicon
- Annealing Behavior of Arsenic and Gallium Implanted in Silicon with Thin Native-Oxide Films
- Structures of Carbon Deposits Formed on a Graphite Electrode durirng Fullerene Generation
- Multiple Photochemical Hole Burning of Tetraphenylporphine Derivatives