GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH_4/H_2-Reactive-Ion-Etching
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概要
- 論文の詳細を見る
- 1999-09-20
著者
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Nakamura M
Institute Of Advanced Material Study And Department Of Molecular Science And Technology Graduate Sch
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ARAI Shigehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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YASUMOTO Hideo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Yasumoto Hideo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Arai S
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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TAMURA Shigeo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Tamura Shigeo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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NUNOYA Nobuhiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Yagi H
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Arai Shigehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Tanaka S
International Superconductivity Technol. Center Tokyo Jpn
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NAKAMURA Madoka
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Nunoya Nobuhiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Tamura S
Sony Corp. Yokohama Jpn
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Yasumoto H
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Nunoya N
Tokyo Inst. Technol. Tokyo Jpn
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Nakamura M
Toshiba Corp. Yokohama Jpn
関連論文
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- Theoretical Analysis of GaInAsP/InP Multiple Micro-Cavity Laser
- Continuous Wave Operation of 1.55 μm GaInAsP/InP Laser with Semiconductor/Benzocyclobutene Distributed Bragg Reflector
- Multiple Micro-Cavity Laser with Benzocyclobutene/Semiconductor High Reflective Mirrors Fabricated by CH_4/H_2-Reactive Ion Etching
- GaInAsP/InP Multiple Short Cavity Laser with λ/4-Air Gap/Semiconductor Bragg Reflectors
- GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes
- GaInAsP/InP Long Wavelength Quantum-Wire Lasers
- [Invited]GaInAsP/InP Long Wavelength Quantum-Wire Lasers
- Room Temperature-Copntinuous Wave Operation of GaInAsP/InP Multiple-Quantum-Wire Lasers by Dry Etching and Regrowth Method
- Reliable Operation of GaInAsP/InP Distributed Feedback Laser with Wirelike Active Regions
- Distributed Reflector Lasers with First-Order Vertical Grating and Second-Order Bragg Reflectors
- GaInAsP/InP Distributed Reflector Lasers Consisting of Deeply Etched Vertical Gratings : Optics and Quantum Electronics
- 1.5-μm-Wavelength Distributed Feedback Lasers With Deeply Etched First-Order Vertical Grating : Optics and Quantum Electronics
- Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Laser Combined with Multiple Cavities for 1.5-μm-Wavelength Single-Mode Operation
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- Low-Damage GaInAs(P)/InP Nanometer Structure by Low-Pressure ECR-RIBE
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- Distributed Reflector Laser Integrated with Active and Passive Grating Sections Using Lateral Quantum Confinement Effect
- Multiple-Quantum-Wire Structures with Good Size Uniformity Fabricated by CH_4/H_2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth
- GaInAsP/InP Strain-Compensated Quantum-Wire Lasers Fabricated by CH_4/H_2 Dry Etching and Organometallic Vapor-Phase-Epitaxial RegroWth : Optics and Quantum Electronics
- Distributed Reflector Laser with Wirelike Active Regions for Asymmetric Output Property (Short Note)
- Low Threshold Current Density Operation of GaInAsP/InP Lasers with Strain-Compensated Multiple-Layered Wirelike Active Regions
- GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH_4/H_2 Reactive-Ion Etching
- Characterization of Etching Damage in Cl_2/H_2-Reactive-Ion-Etching of GaInAs/InP Heterostructure
- Low Threshold GaInAsP/InP Distributed Feedback Lasers with Periodic Wire Active Regions Fabricated by CH_4/H_2 Reactive Ion Etching
- Evaluation of Optical Gain Properties of GaInAsP/InP Compressively Strained Quantum-Wire Lasers
- GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH_4/H_2-Reactive-Ion-Etching
- Temperature Dependence of Internal Quantum Efficiency of 20-nm-Wide GaInAsP/InP Compressively-Strained Quantum-Wire Lasers
- Sidewall Recombination Velocity in GaInAsP/InP Quantum-Well Lasers with Wire-like Active Region Fabricated by Wet-Chemical Etching and Organo-Metallic Vapor-Phase-Epitaxial Regrowth
- Gain Spectrum Measurement of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers
- Fabrication of GaInAs/InP Quantum Wires by Organometallic-Vapor-Phase-Epitaxial (OMVPE) Selective Growth on Grooved Side Walls of Ultrafine Multilayers
- A New-Type 1.5 〜 1.6 μm GaInAsP/InP BIG-DBR Laser by an Island-Type Mesa Process
- Light Emission from Quantum-Box Structure by Current Injection
- Spontaneous Recombination, Gain and Refractive Index Variation for 1.6 μm Wavelength InGaAsP/InP Lasers
- The Temperature Dependence of the Efficiency and Threshold Current of In_Ga_xAs_yP__ Lasers Related to Intervalence Band Absorption
- 1.5-1.6 μm Wavelength (100) GaInAsP/InP DH Lasers : B-3: LASER
- Room Temperature CW Operation of GaInAsP/InP DH Laser Emitting at 1.51 μm
- Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 μm
- 1.67 μm Ga_In_As/InP DH Lasers Double Cladded with InP by LPE Technique
- Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with(100)Substrate in the Range of 1.2-1.5 μm
- Ga_xIn_As_yP_-InP Injection Laser Partially Loaded with Distributed Bragg Reflector
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- Surface Damage in GaInAs/GaInAsP/InP Wire Structures Prepared by Substrate-Potential-Controlled Reactive Ion Beam Etching
- Fabrication of GaInAs/GaInAsP/InP Multi-Quantum-Wires and -Boxes by Substrate-Potential-Controlled Electron Cyclotron Resonance Reactive Ion Beam Etching
- Size Fluctuation of 50 nm Periodic GaInAsP/InP Wire Structure by Electron Beam Lithography and Wet Chemical Etching
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- GaInAsP/InP Compressively Strained Quantum-Wire Lasers Fabricated by Electron Beam Lithography and 2-Step Organometallic Vapor Phase Epitaxy
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- High-Reflectivity Semiconductor/Benzocyclobutene Bragg Reflector Mirrors for GaInAsP/InP Lasers
- Reliable Operation of GaInAsP/InP Distributed Feedback Laser with Wirelike Active Regions
- Distributed Reflector Laser Integrated with Active and Passive Grating Sections Using Lateral Quantum Confinement Effect
- Multiple-Quantum-Wire Structures with Good Size Uniformity Fabricated by CH4/H2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth
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