Mechanism of High Selectivity and Impurity Effects in HBr RIE: In-Situ Surface Analysis

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概要

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• The brominated surface layer of SiO_2 was studied after HBr reactive ion etching (RIE) with in-situ X-ray photoelectron spectroscopy (XPS). Bromine was observed, but neither the Si-Si nor the Si-Br_x bond was spectrally detected. Most of the bromine on the SiO_2 surface desorbed after atmospheric exposure. Oxygen was depleted by both HBr RIB and rare gas sputtering, and the XPS peak was broadened by sputtering. Carbon addition enhanced the oxygen depletion and the peak broadening. Results indicate that the conventional "chemical sputtering" does not occur in the HBr RIE of SiO_2, but rather oxygen extraction by ion bombardment or preferential sputtering initiates the etching reaction. After the extraction, bromine reacts with silicon within the same collision cascade, and prevents the Si-O recombination, which is observed as the peak broadening. Carbon enhances the oxygen extraction.

• 社団法人応用物理学会の論文
• 1992-06-30

著者

• Nakamura M

  Institute Of Advanced Material Study And Department Of Molecular Science And Technology Graduate Sch

• Matsuo J

  Fujitsu Lab. Atsugi

• Matsuo Jiro

  Fujitsu Laboratories

• Nakamura Moritaka

  Process Development Division Fujitsu Limited

• Nakamura M

  Toshiba Corp. Yokohama Jpn

• KOSHINO Keiji

  Basic Process Development Division, Fujitsu Ltd.

• KOSHINO Keiji

  Process Development Division, FUJITSU LIMITED

• Koshino Keiji

  Basic Process Development Division Fujitsu Ltd.

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