Very High Selective N^+ poly-Si RIE with Carbon Elimination : Etching and Deposition Technology

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1989-12-30

著者

• Nakamura Moritaka

  Process Development Division Fujitsu Limited

• IIZUKA Katsuhiko

  Process Development Division FUJITSU LIMITED

• YANO Hiroshi

  Process Development Division FUJITSU LIMITED

• Yano Hiroshi

  Process and Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company

関連論文

• Mechanism of High Selectivity and Impurity Effects in HBr RIE: In-Situ Surface Analysis
• Reduction of Electron Shading Damage Using Synchronous Bias in Pulsed Plasma
• Very High Selective N^+ poly-Si RIE with Carbon Elimination : Etching and Deposition Technology

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