Chemical States of Bromine Atoms on SiO_2 Surface after HBr Reactive Ion Etching : Analysis of Thin Oxide
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概要
- 論文の詳細を見る
Low-energy ion scattering spectroscopy (ISS) and X-ray photoelectron spectroscopy (XPS) have been used to determine the nature of Br atoms on very thin thermal silicon dioxide (approximately 5 nm) after HBr reactive ion etching (RIE). The result of ISS clarified that the etched surface was covered with 1 morrolayer Br. The Br atoms on the etched SiO_2 surface were found, from the restult of XPS analysis, to have two chemical adsorption states. The experiment of atomic Br exposure showed that one adsorption state was on the as-grown SiO_2 surface and the other state was at the damaged sites induced by ion bombardment.
- 社団法人応用物理学会の論文
- 1993-06-30
著者
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Nakamura M
Institute Of Advanced Material Study And Department Of Molecular Science And Technology Graduate Sch
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Matsuo J
Fujitsu Lab. Atsugi
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Matsuo Jiro
Fujitsu Laboratories
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NAKAMURA Moritaka
Basic Process Development Div.
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Nakamura M
Toshiba Corp. Yokohama Jpn
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KOSHINO Keiji
Basic Process Development Division, Fujitsu Ltd.
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Koshino Keiji
Basic Process Development Division Fujitsu Ltd.
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