Free Radicals in an Inductively Coupled Etching Plasma
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概要
- 論文の詳細を見る
A high-density (>10^<11> cm^<-3>) CF_4/H_2 plasma was produced in an inductively coupled plasma (ICP) reactor where an external helical coil is wound around a quartz tube. Capacitive coupling from the coil to the plasma caused the release of a large number of impurities (SiF_4 and CO) from the warm quartz wall close to the coil. These impurities significantly deteriorate the etch selectivity of SiO_2 to Si in the ICP reactor. Water cooling and a Faraday shield are effective to suppress the release of impurities. Neutral radicals CF_3, CF_2, CF and F were measured in addition to ionic species. The high-density high electron-temperature ICP causes the formation of a large number of F atoms and CF^+ ions with fewer CF_x radicals, in comparison to a low-density capacitively coupled plasma (CCP). H_2 addition to the CF_4 discharge drastically modifies the CF_3 and CF_2 densities in the ICP as well as in the CCP. The high etch rates and the low selectivity of SiO_2 to Si obtained in the ICP were discussed taking account of the residence time and the dissociation time of reactive species in the etching reactor.
- 社団法人応用物理学会の論文
- 1994-04-30
著者
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Sugai Hideo
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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NAKAMURA Moritaka
Basic Process Development Div.
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Nakamura Moritaka
Basic Process Development Division Fujitsu Ltd.
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Hikosaka Yukinobu
Department O Electrical Engineering Nagoya University:basic Process Development Division Fujitsu Ltd
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Sugai Hideo
Department O Electrical Engineering Nagoya University
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