Additive Nitrogen Effects on Oxygen Plasma Downstream Ashing
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-10-20
著者
-
SHINAGAWA Keisuke
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
-
Shinagawa K
Canon Sales Co. Inc. Tokyo Jpn
-
Shinagawa Keisuke
Process Equipment Engineering Div. Canon Sales Co. Inc.
-
FUJIMURA Shuzo
Basic Process Development Div.
-
SHINAGAWA Keisuke
Basic Process Development Div.
-
NAKAMURA Moritaka
Basic Process Development Div.
-
YANO Hiroshi
Basic Process Development Div.
関連論文
- Ashing Properties in a Surface-Wave Mode Plasma with a Quartz Window
- Surface Wave Plasma Production Employing High Permittivity Material for Microwave Window : Nuclear Science, Plasmas, and Electric Discharges
- Ashing Properties in a Surface-Wave Mode Plasma with a High-Permittivity Alumina Window : Semiconductors
- Oxygen Microwave Plasma Density Enhancement by Surface Waves with a High-Permittivity Material Window
- Effects of Nitrogen Addition to Microwave Oxygen Plasma in Surface Wave with Disk-Plate Window and Photoresist Ashing
- Additive Nitrogen Effects on Oxygen Plasma Downstream Ashing
- Native Oxide Removal on Si Surfaces by NF_3-Added Hydrogen and Water Vapor Plasma Downstream Treatment
- Effects of H_2O on Atomic Hydrogen Generation in Hydrogen Plasma
- Chemical States of Bromine Atoms on SiO_2 Surface after HBr Reactive Ion Etching : Analysis of Thin Oxide
- Free Radicals in an Inductively Coupled Etching Plasma