Radical Control by Wall Heating of a Fluorocarbon Etching Reactor
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概要
- 論文の詳細を見る
The entire vessel of a RF diode etching reactor was heated to control the radical composition of a CF_4/H_2 plasma. Appearance mass spectrometry revealed that the CF_3 and CF_2 densities are 2 to 3 orders of magnitude higher in the heated reactor at 230℃, compared with the conventional reactor at 30℃. On the other hand, the F atom density monitored by an actinometry technique is almost unchanged. The temporal variation of the CF_3 and CF_2 densities induced by H_2 addition is relatively smaller in the heated environment. A few mechanisms for the anomalous increase of the CF_x radical are discussed in view of the radical surface loss and the electron-impact radical production. As a consequence, wall heating is useful for controlling the etching processes by enhancing the carbon-containing radicals.
- 社団法人応用物理学会の論文
- 1994-09-01
著者
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Nakamura Keiji
Department of Electrical Engineering, Nagoya University
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Sugai Hideo
Department of Electrical Engineering, Nagoya University
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ITO Satoshi
Department of Pharmacology, Tohoku University Graduate School of Medicine
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Ito Satoshi
Department Of Electrical Engineering Nagoya University
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Sugai Hideo
Department O Electrical Engineering Nagoya University
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Ito Satoshi
Department Of Biological Production And Environmental Science Faculty Of Agriculture University Of M
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Nakamura Keiji
Department Of Biology And Geosciences Graduate School Of Science Osaka City University:present Addre
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ITO Satoshi
Deparetment of Internal Medicine (II), Niigata University School ofMedicine
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