Radical Kinetics in a Fluorocarbon Etching Plasma
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概要
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Neutral free radicals, CF_3 and CF_2, in a radio-frequency CF_4/H_2 discharge were detected using appearance mass spectrometry. The spatial density distributions of these radicals were obtained with the mixing ratio of H_2/CF_4 as a key parameter. Adding a 10% H_2 gas to CF_4 enhanced the CF_2 density by a factor of 50 and flattened the spatial profile. By the injection of the H_2 gas abruptly into the CF_4 discharge, the temporal transition to the CF_4/H_2 discharge was investigated. When the percentage of H_2≥5%, a strange time variation is found for the CF_3 radical: its density sharply rises by a factor of 10 and slowly falls to a value close to the initial one. The slow time response was attributed to the H_2-induced polymer deposition. The surface loss probability of CF_2 and CF_3 was measured invarious conditions which suggested the importance of surface chemistry of radicals.
- 社団法人応用物理学会の論文
- 1993-06-30
著者
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Hikosaka Y
Association Of Super-advanced Electronics Technologies (aset):(present Address)device Development Di
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Hikosaka Yukinobu
Department O Electrical Engineering Nagoya University:basic Process Development Division Fujitsu Ltd
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Sugai Hideo
Department O Electrical Engineering Nagoya University
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