Study of the Etching Reaction by Atomic Chlorine Using Molecular Beam Scattering

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We studied the interaction of atomic chlorine with Si(100)2×1 surfaces using atomic chlorine beams. Above 600℃, the etching reactions with molecular or atomic chlorine were the same, therefore we studied reactions below 600℃. Most of the desorption products were SiCl_2, but some higher silicon chlorides, such as SiCl_4 or Si_2Cl_6, also desorbed from the surface. Our study of the temperature dependence of the SiCl_2 desorption reaction showed that the activation energy is 0.08 eV at 0.4 monolayers (ML) and 0.2 eV at 0.8 ML. These extremely low activation energies suggest that the surface reaction is mainly driven by the kinetic or chemical potential energy of incident atomic chlorine instead of thermal excitation from the Si(100) surface. The reaction depends on the surface chlorine coverage, with the reaction occurring above 0.3 ML, reaching a maximum at 0.4 ML, and decreasing as the coverage increases further.
社団法人応用物理学会の論文
1994-04-30