100-keV Focused Ion Beam System for Field Ion Source : Lithography Technology

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Suppression of Transient Enhanced Diffusion by Local-Oxidation-Silicon-Induced Stress
Suppression of Transient Enhanced Diffusion by LOCOS Induced Stress
Analysis of Non-Uniform Boron Penetration of Nitrided Oxide in PMOSFETs Considering Two-Dimensional Nitrogen Distribution
Hydrogen-Enhanced Boron Penetration in PMOS Devices during SiO_2 Chemical Vapor Deposition
Hydrogen-Enhancing Boron Penetration in P-MOS Devices during SiO_2 Chemical Vapor Deposition
Boron Diffusion in Nitrided-Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
Boron Diffusion in Nitrided Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels
High-Performance X-Ray Mask Fabrication Using TaGeN Absorber and Dummy Pattern Method for Sub-100nm Proximity X-Ray Lithography : Instrumentation, Measurement, and Fabrication Technology
Quantum-Size Effect from Photoluminescence of Low-Temperature-Oxidized Porous Si
Atomic Step Structure on Vicnal H/Si(111) Surface Formed by Hot Water Immersion
Boron Diffusion in SiO_2 Involving High-Concentration Effects
Boron Diffusion in SiO_2 Involving High-Concentration Effects
Study of the Etching Reaction by Atomic Chlorine Using Molecular Beam Scattering
Scaling Law for Secondary Cosmic-Ray Neutron-Induced Soft-Errors in DRAMs
Impact of Current Gain Increment Effect on Alpha Particle Induced Soft Errors in SOI DRAMs
Mo Contamination in p/p^+ Epitaxial Silicon Wafers
Evaluation of Photoemitted Current from SiO_2 Film on Silicon During Synchrotron Radiation Irradiation
Synchrotron Radiation-Assisted Silicon Film Growth by Irradiation Parallel to the Substrate
100-keV Focused Ion Beam System for Field Ion Source : Lithography Technology
Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels

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