Mo Contamination in p/p^+ Epitaxial Silicon Wafers
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概要
- 論文の詳細を見る
We detected the same deep level in the epitaxial layer of all as-grown p/p^+ epitaxial wafers from three vendors. The deep level is characterized by an energy of Ev+0.30 eV and a hole-capture cross section of 6.0×10^<-16> cm^2. This deep level is determined as being a Mo deep level. These Mo deep levels vary with vendor in concentration from 3.0×10^<11> to 1.5×10^<12> cm^<-3> and are found to reduce the minority-carrier recombination lifetime in the epitaxial layer. We examined the gettering effect of the p^+ substrate, which is heavily doped with boron, on Mo impurities. We found that Mo impurities are not gettered in the p^+ substrate, unlike 3d-transition metals such as Fe impurities.
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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Sasaki Nobuo
Fujitsu Laboratories Limited
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Itakura Toru
Fujitsu Laboratories Ltd.
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AOKI Masaki
FUJITSU LABORATORIES LTD.
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Itakura Toru
Fujitsu Laboratories Ltd
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