Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation
スポンサーリンク
概要
- 論文の詳細を見る
We have developed a new silicon (Si) crystallization method that makes it possible to form single-crystalline Si in the channel regions of thin-film transistors (TFTs) on non-alkali glass without introducing thermal damage. The method includes using a frequency-doubled ($2\omega$) diode-pumped solid-state (DPSS) Nd:YVO4 continuous-wave (CW) laser ($\lambda=532$ nm). The unique characteristics of this crystallization method are the introduction of a pre-defined thick capping-Si layer on a pre-patterned channel region and laser irradiation from the back surface through the glass substrate. We succeeded in forming 2-μm-wide and 20-μm-long single-crystalline Si in the channel region of a TFT. A high-performance n-channel TFT on a glass substrate was obtained using a 450°C fabrication process. The TFT had a field-effect mobility of 400 cm2/Vs, a subthreshold swing of 0.16 V/dec, and a threshold voltage of 0.24 V.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-01-15
著者
-
Sasaki Nobuo
Fujitsu Laboratories Limited
-
YOSHINO Kenichi
Fujitsu Laboratories Limited
-
TAKEUCHI Fumiyo
Fujitsu Laboratories Limited
-
Hara Akito
Fujitsu Lab. Ltd.
-
Yoshino Kenichi
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
-
Hara Akito
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
-
Sasaki Nobuo
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
-
Takeuchi Fumiyo
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
関連論文
- Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline Silicon Thin-Film Transistors on Non-Alkali Glass Substrate Using Diode-Pumped Solid-State Continuous Wave Laser Lateral Crystallization
- High Performance Low Temperature Polycrystalline Silicon Thin Film Transistors on Non-alkaline Glass Produced Using Diode Pumped Solid State Continuous Wave Laser Lateral Crystallization
- High-Performance Polycrystalline Silicon Thin Film Transistors on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization : Semiconductors
- A New Approach for Form Polycrystalline Silicon by Excimer Laser Irradiation with a Wide Range of Energies
- Micro-Scale Characterization of Crystalline Phase and Stress in Laser-Crystallized Poly-Si Thin Films by Raman Spectroscopy
- Silicon-Hydrogen Bonds in Laser-Crystallized Polysilicon Thin Films and Their Effects on Electron Mobility
- Phase Variation of Amorphous-Si and Poly-Si Thin Films with Excimer Laser Irradiation
- Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation
- Influence of Grown-in Hydrogen on Thermal Donor Formation and Oxygen Precipitation in Czochralski Silicon Crystals
- Control of Nucleation and Solidification Direction of Polycrystalline Silicon by Excimer Laser Irradiation
- Intrinsic Gettering of Iron Impurities in Silicon Wafers
- Mo Contamination in p/p^+ Epitaxial Silicon Wafers
- Effect of Implanted Oxygen and Nitrogen on Mobility and Generation of Dislocation in SiGe/Si Heterostructure
- Distribution of Fe in an Intrinsic Gettered Silicon Wafer after Annealing at Supersaturation Temperature
- Hydrogen-like Ultrashallow Thermal Donors in Silicon Crystals
- Selective Single-Crystalline-Silicon Growth on Non-Alkali Glass
- High Performance Low Temperature Polycrystalline Silicon Thin Film Transistors on Non-alkaline Glass Produced Using Diode Pumped Solid State Continuous Wave Laser Lateral Crystallization
- Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation
- Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline Silicon Thin-Film Transistors on Non-Alkali Glass Substrate Using Diode-Pumped Solid-State Continuous Wave Laser Lateral Crystallization
- Electron Spin Resonance of Oxygen-Nitrogen Complex in Silicon
- Effects of Grown-in Hydrogen on Lifetime of Czochralski Silicon Crystals